General Electric Company

Danfoss Silicon Power Gmbh

Ge Energy Power Conversion Technology Gmbh

Tobias Schuetz

Robert Roesner

Alvaro Jorge Mari Curbelo

Robert Gregory Wagoner

Philip Michael Cioffi

Todd David Greenleaf

Xiaoting Dong

Philipp Leuner

Terry Michael Tackman

A half bridge power module () comprising a substrate () comprising an inner load track (), two intermediate load tracks () and two outer load tracks (), wherein an external terminal is mounted on one of the intermediate load tracks (), an external terminal () is mounted on one of the outer load tracks () and an external terminal () is mounted on the inner load track (); wherein semiconductor switches () are mounted on the outer load tracks () and are electrically connected to the intermediate load track (); and semiconductor switches () are mounted on the intermediate load tracks () and are electrically connected to the inner load track ().

Semiconductor module

A feedthrough includes a first printed circuit board, a first flexible conductive element coupled to and extending from an edge of the first printed circuit board, a second printed circuit board, and a second flexible conductive element coupled to and extending from an edge of the second printed circuit board.

High current flexible feedthrough for use with a power converter

A shielded direct current link ('DC link') busbar includes a central planar element that includes a first surface and a second surface axially opposed to the first surface. The shielded DC link busbar further includes a first conductive lamina disposed over the first surface and a second conductive lamina disposed over the second surface. Further, the first conductive lamina and the second conductive lamina are electrically coupled.

Electrically shielded direct current link busbar

An electronic module is presented. The electronic module includes one or more electronic devices and a first bus electrically coupled to at least one of the one or more electronic devices. The first bus includes a first electrically conductive plate, a second electrically conductive plate, and a first electrically insulating plate disposed between the first electrically conductive plate and the second electrically conductive plate, where in a first portion of the first bus, the first electrically insulating plate is disposed such that the first electrically insulating plate is not in direct physical contact with at least one of the first electrically conductive plate and the second electrically conductive plate to form at least one cavity between the first electrically insulating plate and at least one of the first electrically conductive plate and the second electrically conductive plate. An electronic module assembly having low loop inductance is also presented.

Electronic module assembly having low loop inductance

There are provided methods and systems for operating insulated gate bipolar transistors (IGBTs). For example, there is provided a method that can include detecting a desaturation condition in an IGBT and initiating a turn off procedure when desaturation is detected. The turn off procedure can include holding a gate of the IGBT at at least one voltage level intermediate between a positive rail voltage and a negative rail voltage of an operational range of the IGBT.

Growing community of inventors

Munich, Germany

Tobias Schuetz