Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Tobias Meyer

Matthias Peter

Alexander Walter

Tetsuya Taki

Christian Leirer

Joachim Hertkorn

Rainer Butendeich

Korbinian Perzlmaier

Juergen Off

Alexander F Pfeuffer

Berthold Hahn

Siegfried Herrmann

Andreas Biebersdorf

Andreas Löffler

Jürgen Off

Peter Stauss

Lorenzo Zini

Michael Binder

Kerstin Neveling

Frank Singer

Erwin Lang

Martin Rudolf Behringer

Tansen Varghese

Marc Philippens

Petrus Sundgren

Clemens Vierheilig

Sebastian Wittmann

Philipp Drechsel

Bruno Jentzsch

Jens Mueller

Adam Bauer

Julia Stolz

Hubert Maiwald

Asako Hirai

Christian Mueller

Rainer Hartmann

Ruth Boss

Alvaro Gomez-Iglesias

Roland Zeisel

Andreas Loeffler

Bastian Galler

Anna Nirschl

Tobias Niebling

Dario Schiavon

Thomas Schwarz

Matthias Sabathil

Karl Engl

Lutz Höppel

Johannes Baur

Andreas Ploessl

Alexander Frey

Hans-Jürgen Lugauer

Markus Maute

Jens Ebbecke

Simeon Katz

Thomas Lehnhardt

Nikolaus Gmeinwieser

Christine Rafael

Philipp Kreuter

Andreas Rückerl

Tobias Gotschke

Tilman Schimpke

Andreas Rueckerl

Jan-Philipp Ahl

Sebastian Hoibl

Peter Stauß

Moses Richter

Tobias Berthold

Peter Strauß

Ansgar Laubsch

In an embodiment a method for producing radiation-emitting semiconductor chips includes providing a semiconductor wafer, applying first contact layers on the semiconductor wafer, applying a second dielectric layer on the semiconductor wafer and the first contact layers, attaching a carrier arrangement to the semiconductor wafer, singulating the semiconductor wafer into semiconductor bodies and applying second contact layers on the semiconductor bodies, wherein the second dielectric layer is formed such that it mechanically stabilizes itself.

Method for producing radiation-emitting semiconductor chips, radiation-emitting semiconductor chip and radiation-emitting component

An optoelectronic semiconductor component may include a semiconductor body having a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, as well as a first surface and a second surface different from the first surface. The component may further include a first contact structure for electrically contacting the first semiconductor region and a second contact structure for electrically contacting the second semiconductor region. The first and second contact structures may each have a first connection region arranged on the first surface and a second connection region arranged on the second surface for electrically contacting the semiconductor component from the outside. The first and second connection regions of the first contact structure and the first and second connection regions of the second contact structure may each be designed to be rotationally symmetrical with respect to an axis of symmetry.

Optoelectronic semiconductor component

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

U-LED, U-LED device, display and method for the same

μ-LED, μ-LED device, display for augmented reality or lighting applications

In an embodiment, an optoelectronic semiconductor component includes a semiconductor layer sequence with a doped first layer, a doped second layer, an active zone configured to generate radiation by electroluminescence between the first layer and the second layer, and a side surface extending transversely to the active zone and delimiting the semiconductor layer sequence in a lateral direction, two electrodes for electrical contact between the first and second layers and a cover layer located on the side surface in a region of the first layer, wherein the cover layer is in direct contact with the first layer, wherein a material of the cover layer alone and its direct contact with the first layer are configured to cause a formation of a depletion zone in the first layer, wherein the depletion zone comprises a lower concentration of majority charge carriers compared to a rest of the first layer, wherein the cover layer comprises a metal or a metal compound, and wherein the cover layer forms a Schottky contact with the first layer.

In an embodiment a method for producing a component having a carrier and at least one component part electrically conductively connected to the carrier and mechanically fixed to the carrier by an electrically insulating bonding layer includes providing the carrier having a connection layer, wherein the bonding layer is disposed on the carrier and has at least one opening, wherein a connection surface of the connection layer is exposed, and wherein the bonding layer projects vertically beyond the exposed connection surface or vice versa, applying the component part having a contact layer on the carrier in such that, in top view of the carrier, an exposed contact surface of the contact layer covers the opening and the connection surface located therein, wherein the exposed contact surface is spaced apart from the exposed connection surface by a vertical distance and reducing the vertical distance by changing a volume of the bonding layer such that the exposed contact surface and the exposed connection surface are brought together, such that they are directly adjacent to each other and such that a direct electrical contact is formed between the contact layer and the connection layer.

Method for producing a component, and component

μ-LED, μ-LED device, display and method for the same

Optoelectronic components, groups of optoelectronic components, and methods for producing a component or a plurality of optoelectronic components are provided. The method may include providing a growth substrate having a buffer layer arranged thereon. The buffer layer may be structured in such a way that it has a plurality of the openings which are spaced apart from one another in lateral directions. A plurality of semiconductor bodies may be formed in the openings, wherein in the areas of the openings, the buffer layer has subregions which are arranged in a vertical direction between the growth substrate and the semiconductor bodies. The growth substrate may be detached from the semiconductor bodies. The buffer layer may be removed at least in the areas of the subregions.

Optoelectronic component, optoelectronic component group in buffer layer opening and production method for same

A method for sorting optoelectronic semiconductor components is specified. The semiconductor components each include an active region for emission or detection of electromagnetic radiation. The method includes the following steps: introducing the semiconductor components into a sorting region on a specified path; irradiating the optoelectronic semiconductor components with electromagnetic radiation of a first wavelength range to generate dipole moments by charge separation in the active regions of the optoelectronic semiconductor components; and deflecting the optoelectronic semiconductor components from the specified path as a function of their dipole moment by means of a non-homogeneous electromagnetic field. A device for sorting optoelectronic semiconductor components is further specified.

Method for sorting optoelectronic semiconductor components and device for sorting optoelectronic semiconductor components

An optoelectronic semiconductor device includes a semiconductor layer sequence including an active zone that generates radiation by electroluminescence; a p-electrode and an n-electrode; an electrically insulating passivation layer on side surfaces of the semiconductor layer sequence; and an edge field generating device on the side surfaces on a side of the passivation layer facing away from the semiconductor layer sequence at the active zone, wherein the edge field generating device is configured to generate an electric field at least temporarily in an edge region of the active zone so that, during operation, a current flow through the semiconductor layer sequence is controllable in the edge region.

Optoelectronic semiconductor device and method of operating an optoelectronic semiconductor device

An optoelectronic semiconductor chip is disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor body comprising a first semiconductor structure, a second semiconductor structure and an active region between the first and the second semiconductor structure and a plurality of recesses, each penetrating at least one of the semiconductor structures and the active region, wherein a cover surface of the active region is a continuous surface, and wherein at least in some of the recesses, surfaces of the recesses are completely covered with an electrically insulating material.

Optoelectronic semiconductor chip

An optoelectronic semiconductor chip is disclosed. In an embodiment a chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure includes multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction and which each extend continuously over the entire multi-quantum-well structure, wherein seen in a cross-section parallel to the growth direction, the multi-quantum-well structure has at least one emission region and multiple transport regions, wherein the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission region, wherein, along the growth direction, the transport regions have a constant width, and wherein the quantum-well layers and the barrier layers are oriented parallel to one another in the emission region and in the transport regions.

A method for producing an optoelectronic semiconductor chip is disclosed. A substrate is provided and a first layer is grown. An etching process is carrying out to initiate V-defects. A second layer is grown and a quantum film structure is grown. An optoelectronic semiconductor chip is also disclosed. The method can be used to produce the optoelectronic semiconductor chip.

Optoelectronic semiconductor chip and method for the production thereof

An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

Optoelectronic semiconductor chip and method for fabrication thereof

A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.

Light-emitting semiconductor chip

Growing community of inventors

Ihrlerstein, Germany

Tobias Meyer