Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Tobias Gotschke

Korbinian Perzlmaier

Jürgen Off

Juergen Off

Christian Leirer

Matthias Peter

Tobias Meyer

Werner Bergbauer

Alexander Walter

Thomas Lehnhardt

Bastian Galler

A semiconductor chip is disclosed. In an embodiment a semiconductor chip includes a multiply-connected mask layer comprising openings, the openings completely penetrate the mask layer and a semiconductor layer sequence, which, at least in places, is in direct contact with the mask layer, wherein the semiconductor layer sequence is disposed on the mask layer, wherein the mask layer comprises a light-transmissive material, and wherein the light-transmissive material comprises an optical refractive index for light which is smaller than a refractive index of the semiconductor layer sequence.

Semiconductor chip having a mask layer with openings

The invention relates to a method for producing a nitride semiconductor component (), comprising the steps of: &#x2014;providing a growth substrate () having a growth surface () formed from a planar area () with a plurality of three-dimensionally shaped surface structures () on said planar area (), &#x2014;growing a nitride-based semiconductor layer sequence () on the growth surface (), growth beginning selectively on a growth area () of said growth substrate, and the growth area () being less than 45% of the growth surface (). The invention also relates to a nitride semiconductor component () which can be produced according to said method.

Method for producing a nitride semiconductor component, and a nitride semiconductor component

A method for producing a plurality of semiconductor chips and a semiconductor chip are disclosed. The method includes applying a mask material on a growth surface of a growth substrate, wherein the growth surface includes sapphire, patterning the mask material into a multiply-connected mask layer by introducing openings into the mask material, wherein the growth surface is exposed at the bottom of at least some of the openings, applying a semiconductor layer sequence on the mask layer and on the growth surface and singulating at least the semiconductor layer sequence into the plurality of semiconductor chips, wherein each semiconductor chip includes lateral dimensions and the lateral dimensions are large compared to an average distance of the openings to the nearest opening.

Method for producing a plurality of semiconductor chips having a mask layer with openings

An optoelectronic semiconductor component includes a layer sequence including a p-doped layer, an n-doped layer and an active zone that generates electromagnetic radiation arranged between the n-doped layer and the p-doped layer, wherein the n-doped layer includes at least GaN, an interlayer is arranged in the n-doped layer, wherein the interlayer includes AlGaN, wherein 0&#x3c;x&#x2266;1, and the interlayer includes magnesium.

Semiconductor component comprising an interlayer

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Nittendorf, Germany

Tobias Gotschke