Alma Mater Studiorum-universitá Di Bologna

Universidade Nova De Lisboa

Tobias Cramer

Elvira Maria Correia Fortunato

Beatrice Fraboni

Pedro Miguel Cândido Barquinha

Rodrigo Ferräo De Paiva Martins

Rodrigo FERRÃO De Paiva Martins

The present invention concerns a sensitive field effect device () comprising a semiconductor channel (), a source electrode () connected to said semiconductor channel (), a drain electrode () connected to said semiconductor channel (), such that said semiconductor channel () is interposed between said source electrode () and said drain electrode (), a gate electrode () and a dielectric layer () interposed between said gate electrode () and said semiconductor channel (), characterized in that said semiconductor channel () is a layer and is made of an amorphous oxide and in that said sensor means () are configured to change the voltage between said gate electrode () and said source electrode () upon a sensing event capable of changing their electrical state. The present invention also concerns a sensor and a method for manufacturing said field effect device ().

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Pianoro, Italy

Tobias Cramer