Novaled Ag

Novaled Gmbh

Max-planck-gesellschaft Zur F&#xf6;rderung Der Wissenschaften E. V.

Tobias Canzler

Carsten Rothe

Ansgar Werner

Ulrich Denker

Karl Leo

Jan Birnstock

Martin Pfeiffer

Olaf Zeika

Omrane Fadhel

Sascha Dorok

Markus Hummert

Thomas Rosenow

Domagoj Pavicic

Jan Blochwitz-Nimoth

Kentaro Harada

Frederik Ante

Mike Zoellner

Sven Murano

Gregor Schwartz

Mauro Furno

Qiang Huang

Karsten Walzer

Tomas Kalisz

Andreas Haldi

Oliver Langguth

Bodo Wallikewitz

Martin Vehse

Rudolf Lessmann

Mike Zöllner

Philipp Wellmann

Francisco Bloom

Christiane Koehn

Senthilkumar Madasamy

Martin Koehler

Jens Angermann

Kai Gilge

Martin Köhler

Michael Hofmann

Hagen Klauk

Rothe Carsten

Phillip Wellmann

The present invention relates to an organic light-emitting diode () comprising an emission layer () and at least one electron transport layer (), wherein the at least one electron transport layer () comprises at least one matrix compound and at least two lithium compounds.

Organic light-emitting diode including an electronic transport layer comprising a three component blend of a matrix compound and two lithium compounds

The present invention relates to a method comprising the steps: a) providing a layered structure applicable for preparing an organic electronic device, comprising: aa) a substrate comprising a first electrode structure and a non-electrode part; bb) a grid formed by a grid material, wherein open areas of the grid are arranged above at least a part of the first electrode structure and the grid material is arranged above at least a part of the non-electrode part; and cc) a layer stack comprising at least one redox-doped layer having a conductivity of at least 1E&#x2212;7 S/cm, the layer stack being deposited on the grid; wherein the optical density measured by absorption spectroscopy of the grid material is higher than the optical density of the open areas; and b) irradiating light pulses having a duration of &#x3c;10 ms and an energy of 0.1 to 20 J/cmper pulse, alternatively 1 to 10 J/cm, onto the layered structure; an organic electronic device obtainable this way and a device comprising said organic electronic device.

Flash light illumination method and organic electronic device elements obtainable this way

An active OLED display, comprising a plurality of OLED pixels, each of the OLED pixels comprising an anode, a cathode, and a stack of organic layers, wherein the stack of organic layers is provided between and in contact with the cathode and the anode and comprises an electron transport layer, a hole transport layer, and a light emitting layer provided between the hole transport layer and the electron transport layer, and a driving circuit configured to separately driving the pixels of the plurality of OLED pixels, wherein, for the plurality of OLED pixels, a common hole transport layer is formed by the hole transport layers provided in the stack of organic layers of the plurality of OLED pixels, the common hole transport layer comprising a hole transport matrix material and at least one electrical p-dopant, and the electrical conductivity of the hole transport material being lower than 1&#xd7;10S&#xb7;mand higher than 1&#xd7;10S&#xb7;m.

Active OLED display, method of operating an active OLED display and compound

The present invention relates to an organic light emitting device that includes a layered structure including a substrate, a bottom electrode and a top electrode, wherein the bottom electrode is closer to the substrate than the top electrode, the region between the bottom electrode and the top electrode defining an electronically active region, wherein the electronically active region includes a scattering layer having a thickness of less than 50 nm; and an organic light emitting device additionally having at least one light emitting layer in the electronically active region, and this device can also include a specific chemical compound outside of the electronically active region.

Organic light emitting device

The invention concerns a semiconductor component with a layered arrangement with an electrode, an organic semiconductor layer, an injection layer, and an additive layer, which consists of an additive, which on contact with the molecular doping material modifies its doping affinity with respect to the organic material of the organic semiconductor layer, wherein in the injection layer a layered region is formed with a first doping affinity of the molecular doping material with respect to the organic material and a further layered region is formed with a second, in comparison to the first doping affinity smaller, doping affinity of the molecular doping material with respect to the organic material. Furthermore the invention concerns a method for the manufacture of a semiconductor component and also the application of a semiconductor component.

Semiconductor component

The invention relates to an organic electronic luminescent component with an arrangement of organic layers formed between an electrode and a counter electrode, wherein said arrangement of organic layers is electrically insulated from the electrode and the counter electrode and comprises a light-emitting layer and a charge carrier generation region allocated to the light-emitting layer, wherein the charge carrier generation region is configured to provide positive and negative charge carriers at an application of an electrical AC voltage to the electrode and the counter electrode and wherein a pn-layer transition is formed in the charge carrier generation region by means of a p-doped organic layer and a n-doped organic layer arranged next to the p-doped organic layer.

Organic electroluminescent component

The invention relates to a method for producing a layer structure in an electronic device, especially in an organic light emitting device, the method comprising a step of producing the layer structure as a composite layer structure with free charge carriers generated by charge transfer between a first material and a second material, wherein the composite layer structure is provided as a stack of at least three non-mixed sub-layers made of the first material and the second material, respectively, wherein within the stack of the at least three non-mixed sub-layers each first material sub-layer is followed by an adjacent second material sub-layer and each second material sub-layer is followed by an adjacent first material sub-layer, and wherein the first material and the second material are selected to form a host-dopant material system for the electrical doping. The invention also relates to an electronic device.

Method for producing an electronic device with a layer structure and an electronic device

The invention relates to an organic field-effect transistor, in particular an organic thin-layer field-effect transistor, with a gate electrode, a drain electrode and a source electrode, an active layer of organic material which during operation is configured to form an electrical line channel, a dielectric layer which electrically isolates the active layer from the gate electrode, a dopant material layer which consists of a molecular dopant material whose molecules consist of two or more atoms and which dopant material is an electrical dopant for the organic material of the active layer, and wherein the dopant material layer is formed in a boundary surface region between the active layer and the dielectric layer or is formed adjacent to the boundary surface region.

Organic field-effect transistor

The invention relates to an organic field-effect transistor, in particular an organic thin film field-effect transistor comprising a gate electrode, a drain electrode and a source electrode, a dielectric layer which is formed in contact with the gate electrode, an active layer made from an organic material which is in contact with the drain electrode and the source electrode and which is configured electrically undoped, a dopant material layer which contains a dopant material that is an electrical dopant for the organic material of the active layer, and a border surface region in which a planar contact is formed between the active layer and the dopant material layer, wherein mobility of similar electrical charge carriers, namely electrons or holes, in the dopant material layer is no more than half as great as in the active layer.

Organic field-effect transistor and circuit

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Dresden, Germany

Tobias Canzler