Applied Materials, Inc.

National Semiconductor Corporation

Ii-vi Incorporated

Toan Q Tran

Dmitry Lubomirsky

Soonam Park

Shankar Venkataraman

Satoru Kobayashi

Qiwei Liang

Jang-Gyoo Yang

Xinglong Chen

Kien Nai Chuc

Hideo Sugai

Tae Seung Cho

Saurabh Garg

Kimberly Hinckley

Zilu Weng

Adib M Khan

Won B Bang

Hanh D Nguyen

Junghoon Kim

Nikolai Nikolaevich Kalnin

Matthew L Miller

Shambhu Nath Roy

Yen-Kun Victor Wang

Sultan Malik

Son M Phi

Nitin K Ingle

Abhijit Basu Mallick

Jennifer Y Sun

Jingmei Liang

Xiaowei Wu

Xiao-Ming He

Tae Won Kim

Sukwon Hong

Laksheswar Kalita

Mark Filipowicz

Dong Hyung Lee

Jang Seok Oh

Lun Tsuei

Cheng-Hsuan Chou

Matthew Miller

Daniel S Herkalo

Jin Ho Lee

Dimitry Lubormirsky

Soo Jeon

A plasma reactor has a cylindrical microwave cavity overlying a workpiece processing chamber, a microwave source having a pair of microwave source outputs, and a pair of respective waveguides. The cavity has first and second input ports in a sidewall and space apart by an azimuthal angle. Each of the waveguides has a microwave input end coupled to a microwave source output and a microwave output end coupled to a respective one of the first and second input ports, a coupling aperture plate at the output end with a rectangular coupling aperture in the coupling aperture plate, and an iris plate between the coupling aperture plate and the microwave input end with a rectangular iris opening in the iris plate.

Cylindrical cavity with impedance shifting by irises in a power-supplying waveguide

Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

Flow control features of CVD chambers

A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

Low temperature chuck for plasma processing systems

A method and apparatus for substrate etching are described herein. A processing chamber described herein includes a source module, a process module, a flow module, and an exhaust module. An RF source may be coupled to the chamber and a remote plasma may be generated in the source module and a direct plasma may be generated in the process module. Cyclic etching processes described may use alternating radical and direct plasmas to etch a substrate.

Process chamber for cyclic and selective material removal and etching

An apparatus for plasma processing includes a first plasma source, a first planar electrode, a gas distribution device, a plasma blocking screen and a workpiece chuck. The first plasma source produces first plasma products that pass, away from the first plasma source, through first apertures in the first planar electrode. The first plasma products continue through second apertures in the gas distribution device. The plasma blocking screen includes a third plate with fourth apertures, and faces the gas distribution device such that the first plasma products pass through the plurality of fourth apertures. The workpiece chuck faces the second side of the plasma blocking screen, defining a process chamber between the plasma blocking screen and the workpiece chuck. The fourth apertures are of a sufficiently small size to block a plasma generated in the process chamber from reaching the gas distribution device.

Plasma etching systems and methods with secondary plasma injection

Methods and apparatus for processing a substrate are herein described. For example, a processing chamber for processing a substrate includes a chamber body defining a processing volume; a radio frequency (RF) power source configured to deliver RF energy to the processing volume for processing a substrate; a substrate support comprising an electrode; an AC power supply configured to supply power to the processing chamber; an RF filter circuit connected between the electrode and the AC power supply; and a controller configured to monitor an RF voltage at the RF filter circuit that is indirectly induced into the electrode by the RF power source during operation, and to determine a processing state in the processing volume based on the monitored RF voltage.

Methods and apparatus for processing a substrate

Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

Chemical control features in wafer process equipment

A rotating microwave is established for any resonant mode TEor TMof a cavity, where the user is free to choose the values of the mode indices m, n and l. The fast rotation, the rotation frequency of which is equal to an operational microwave frequency, is accomplished by setting the temporal phase difference &#x394;&#xd8; and the azimuthal angle &#x394;&#x3b8; between two microwave input ports P and Q as functions of m, n and l. The slow rotation of frequency &#x3a9;(typically 1-1000 Hz), is established by transforming dual field inputs &#x3b1; cos &#x3a9;t and &#xb1;&#x3b1; sin &#x3a9;t in the orthogonal input system into an oblique system defined by the angle &#x394;&#x3b8; between two microwave ports P and Q.

Generalized cylindrical cavity system for microwave rotation and impedance shifting by irises in a power-supplying waveguide

Exemplary systems according to embodiments of the present technology include a housing that defines a process chamber and a waveguide cavity. A first conductive plate is disposed within the housing. The system also includes a second conductive plate positioned within the housing and at least partially defining the waveguide cavity. The second conductive plate is vertically translatable within the housing to adjust a distance between the first conductive plate and the second conductive plate to affect modes of electromagnetic radiation propagating within the waveguide cavity. The systems also include one or more electronics sets that are configured to transmit the electromagnetic radiation into the waveguide cavity to produce plasma from at least one process gas delivered within the process chamber.

Systems and methods for radial and azimuthal control of plasma uniformity

A method of applying a multi-layer plasma resistant coating on an article comprises performing plating or ALD to form a conformal first plasma resistant layer on an article, wherein the conformal first plasma resistant layer is formed on a surface of the article and on walls of high aspect ratio features in the article. The conformal first plasma resistant coating has a porosity of approximately 0% and a thickness of approximately 200 nm to approximately 1 micron. One of electron beam ion assisted deposition (EB-IAD), plasma enhanced chemical vapor deposition (PECVD), aerosol deposition or plasma spraying is then performed to form a second plasma resistant layer that covers the conformal first plasma resistant layer at a region of the surface but not at the walls of the high aspect ratio features.

Multi-layer plasma erosion protection for chamber components

An exhaust module for a substrate processing apparatus having a body, a pumping ring, and a symmetric flow valve, is disclosed herein. The body has a first and second vacuum pump opening formed therethrough. The pumping ring is positioned in the body over both the first and second vacuum pump openings. The pumping ring includes a substantially ring shaped body having a top surface, a bottom surface, and an opening. The top surface has one or more through holes formed therein, arranged in a pattern concentric with the first vacuum pump opening. The bottom surface has a fluid passage formed therein, interconnecting each of the one or more through holes. The opening is formed in the substantially ring shaped body, substantially aligned with the vacuum pump opening. The symmetric flow valve is positioned in the body over the pumping ring and movable between a raised position and a lowered position.

Apparatus with concentric pumping for multiple pressure regimes

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San Jose, CA, United States of America

Toan Q Tran