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Novellus Systems Incorporated

Tirunelveli Subramamam Ravi

Darin Scott Olson

Jerrod Paul Krebs

Richard S Swope

A hydrogen-containing chemical species is included in the reactant gas mixture in a plasma-enhanced CVD process for forming a carbon-containing dielectric film. The CVD reactant gas mixture contains silicon, oxygen, hydrogen and carbon atoms for forming a novel carbon-containing silicon oxide film in which both Si&mdash;C and Si&mdash;H bonds are present. Because dielectric material deposited in accordance with the invention has a significant number of Si&mdash;H bonds, which are more robust than Si&mdash;C bonds, it is more resistant to undesired etching and other physical changes during fabrication than dielectric material formed by conventional methods. A method in accordance with the invention allows a faster deposition rate. A dielectric film formed in accordance with the invention has enhanced uniformity characteristics and a dielectric constant less than 3.

Method and apparatus for use of hydrogen and silanes in plasma

A variable high frequency rf bias is applied to a substrate during a high density plasma CVD process for filling gaps in integrated circuits with low dielectric material. The rf bias is varied by applying it as a pulse or by tailoring the magnitude of the rf bias. Preferably, a gasified organic precursor compound comprising silicon, oxygen and carbon atoms is flowed into the plasma CVD reaction chamber. Preferably, no reactive oxygen gas is used in the reaction chamber.

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San Jose, CA, United States of America

Tirunelveli Subramamam Ravi