Aledia

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Tiphaine Dupont

Erwan Dornel

Xavier Hugon

Yohan Desieres

Eric Pourquier

Olivier Jeannin

Philippe Gibert

Ivan-Christophe Robin

Philippe Gilet

Carlo Cagli

Christophe Bouvier

Emilie Pougeoise

Nacer Aitmani

Laurent Grenouillet

Olivier Girard

Brigitte Soulier

Vincent Beix

Florian Dupont

Marion Volpert

Sylvia Scaringella

Thomas Lacave

Denis Renaud

Fabienne Goutaudier

Mehdi Daanoune

Mehdi Dannoune

The invention relates to an optoelectronic device () comprising at least one first light source () configured to emit a first light beam () emitting at at least a first wavelength λand emitted in at least one direction referred to as the first emission direction (), the device being characterized in that it furthermore comprises at least one first reflector () bordering the first light source, configured to reflect in a first direction of reflection of the light rays with the first wavelength λemitted in the first emission direction, and in that the at least one first reflector comprises a plurality of first passive nanowires ().

Optoelectronic device with reflector

An optoelectronic device including a first LED forming a first active structure and including first nanowires having first diameters φ1 such that 0.9·φ10<φ1<1,1·φ10 with φ10 a target value of the first diameters, the first nanowires being arranged according to at least one first array with a step p1, said first LED being configured to emit a first light beam having mainly a first wavelength λ1, and a first transition area bordering at least partially the first LED, the first transition area including a plurality of first transition nanowires, the device being characterised in that the first transition nanowires have first transition diameters and/or a first transition array step varying progressively when moving away from the first LED.

Optoelectronic device with transition areas

A light-emitting diodeincludes a first region, for example of the P type, formed in a first layerand forming, in a direction normal to a basal plane, a stack with a second regionhaving at least one quantum well formed in a second layer, and including a third region, for example of the N type, extending in the direction normal to the plane, bordering and in contact with the first and second regions, through the first and second layers. A process for producing a light-emitting diodein which the third regionis formed by implantation into and through the first and second layers

Light-emitting diode with electrodes on a single face and process of producing the same

An optoelectronic device including a support including a face; light-emitting diodes lying on the face and comprising including semiconductor elements in the form of wires, cones or truncated cones; for each light-emitting diode, an encapsulation block at least partially transparent to the radiation emitted by the light-emitting diodes and covering the light-emitting diode, the maximum thickness of the encapsulation block being comprised between 1 μm and 30 μm, interstices of air being present between the encapsulation blocks covering adjacent diodes; and an electrically conductive layer covering the encapsulation blocks, wherein the refractive index of the encapsulation block covering at least one of the light-emitting diodes is comprised between 1.3 and 1.6.

Optoelectronic device comprising light-emitting diodes with improved light extraction

The manufacture of an optoelectronic device includes the formation of light-emitting diodes where each one has a wire form, the formation of spacing walls made of a first dielectric material transparent to the light radiation originating from the diodes. The lateral sidewalls of each diode are surrounded by spacing walls. Light confinement walls are made of a second material adapted to block the light radiation originating from the diodes. The light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the wherein. A thin layer of the second material is deposited so as to directly cover the lateral sidewalls of the spacing walls by being in contact with the wherein and cover the upper border of the light-emitting diodes. The empty spaces delimited between the spacing walls at the level of the areas between the light-emitting diodes are also filled by the thin layer.

Method for manufacturing an optoelectronic device with self-aligning light confinement walls

The manufacture of an optoelectronic device includes the formation of wire-like shaped light-emitting diodes and the formation of spacing walls transparent to the light radiation originating from the diodes. The lateral sidewalls of each diode are surrounded by at least one of the spacing walls. Light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the latter. The radiation originating from each diode and directed in the direction of the adjacent diodes is blocked by the confinement wall. The upper borders of the diodes are covered by the light confinement material so as to ensure a light extraction by the rear face of the optoelectronic device. An optoelectronic device is also described as such.

An optoelectronic device, including: light-emitting sources, each light-emitting source being capable of emitting a first radiation at a first wavelength; photoluminescent blocks distributed into first photo-luminescent blocks capable of converting by optical pumping the first radiation into a second radiation at a second wavelength and second photoluminescent blocks capable of converting by optical pumping the first radiation into a third radiation at a third wavelength; and for each photoluminescent block, an optical coupler including a first photonic crystal at least partially surrounding the photoluminescent block and covering, with the photo-luminescent block, one of the light-emitting sources next to the photoluminescent block, the optical coupler being capable of modifying the propagation direction of rays of the first radiation emitted by the light-emitting source to redirect the rays towards the photoluminescent block.

Optoelectronic device

There is described an optoelectronic device where each light-emitting diode has a wire-like shape. Spacing walls are formed so that the lateral sidewalls of each light-emitting diode are surrounded by at least one of the spacing walls. Light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the latter. The spacing walls have a convex-shaped outer face. At least one of the spacing walls has, over a lower portion, a thickness that increases when getting away from the substrate. They have, over an upper portion, a thickness that decreases at the level of the upper border of the light-emitting diode when getting away from the substrate. The light confinement walls have an inner face having a concave shape matching with the convex shape and directed towards the light-emitting diode for which it confines the light radiation thereof.

A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.

Method for producing optoelectronic devices comprising light-emitting diodes

An optoelectronic device including a substrate including first and second opposite surfaces and lateral electrical insulation elements extending in the substrate and delimiting first electrically-insulated semiconductor or conductive portions. The optoelectronic device includes, for each first portion, an assembly of light-emitting diodes electrically coupled to the first portion. The optoelectronic device includes an electrode layer covering all the light-emitting diodes, a protection layer covering the electrode layer, and walls extending in the protection layer and delimiting second portions surrounding or opposite the assemblies of light-emitting diodes. The walls contain at least one material from the group including air, a metal, a semiconductor material, a metal alloy, a partially transparent material, and a core made of an at least partially transparent material covered with an opaque or reflective layer.

Optoelectronic device comprising pixels with improved contrast and brightness

A light-emitting device including a substrate at least partially doped with a first type of conductivity and including a face; light-emitting diodes each including at least one three-dimensional semiconducting element which is undoped or doped with the first type of conductivity and resting on the said face; and semiconducting regions forming photodiodes, at least partially doped with a second type of conductivity opposite to the first type of conductivity and extending in the substrate from the said face between at least some of the three-dimensional semiconducting elements, a portion of the substrate of first type of conductivity extending up to the said face at the level of each three-dimensional semiconducting element.

Light-emitting device with integrated light sensor

A light-emitting device including a substrate at least partially doped with a first conductivity type and including a first surface and light-emitting diodes, each diode including at least one three-dimensional semiconductor element, which is or is not doped with the first conductivity type. The semiconductor elements rest on a continuous first portion of the first surface and at least one semiconductor region that forms a photodiode that is at least partially doped with a second conductivity type which is opposite the first conductivity type, and extends into the substrate from a second portion of the first surface that is separate from the first portion.

Light-emitting device having a built-in light sensor

An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.

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Grenoble, France

Tiphaine Dupont