Globalfoundries Inc.

Tino Hertzsch

Dmytro Chumakov

In a semiconductor device, capacitors may be formed so as to be in direct contact with a transistor by using a shared transistor region, such as a drain region or a source region of closely spaced transistors, as one capacitor electrode, while the other capacitor electrode is provided in the form of a buried electrode in the dielectric material of the contact level. To this end, dielectric material may be deposited so as to reliably form a void, wherein, at any appropriate manufacturing stage, a capacitor dielectric material may be provided so as to separate the capacitor electrodes.

Semiconductor device comprising a buried capacitor formed in the contact level

Vertical contact structures, such as contact elements connected to semiconductor-based contact regions in device areas comprising densely-spaced gate electrode structures, are formed for given lithography and patterning capabilities by incorporating at least one additional dielectric layer of superior tapering behavior into the dielectric material system.

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Bobritzsch, Germany

Tino Hertzsch