Power Integrations, Inc.

Velox Semiconductor Corporation

TingGang Zhu

LinLin Liu

Michael Murphy

Bryan S Shelton

Milan Pophristic

Richard A Stall

Mark Gottfried

Marek Pabisz

A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n&#x2212; doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n&#x2212; doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

Gallium nitride semiconductor device

Growing community of inventors

Somerset, NJ, United States of America

TingGang Zhu