Nanjing University

Ting Zhi

Rong Zhang

Tao Tao

Bin Liu

Yi Shi

Peng Chen

Xuan Wang

Bing Liu

Xiangqian Xiu

Yi Li

Ping Han

Youdou Zheng

Zhili Xie

Zhiguo Yu

Feifan Xu

A Micro-LED array device based on III-nitride semiconductors and a method for fabricating the same are provided. The Micro-LED array device includes arrayed sector mesa structures that are formed by etching to penetrate through a p-type GaN layer and a quantum-well active layer and deep into an n-type GaN layer, a p-type electrode array deposited by evaporation on the p-type GaN layer of sector arrays, and an n-type electrode array deposited by evaporation on the n-type GaN layer. The n-type electrode array forms blocking walls to isolate the sector mesas from one another. The blocking walls, and each of the blocking walls and the annular structure surrounding the sector mesa are connected to each other.

Micro-LED array device based on III-nitride semiconductors and method for fabricating same

The present invention provides a method for removing burrs of battery electrode plates using inductively coupled plasma (ICP) dry etching, in which an induction coil is used for ionizing reaction gas. A DC bias is applied to accelerate the ionized reaction gas to bombard the burrs of electrode plate, removing burrs that formed in machining processes using physical bombardment. The equipment used in the present invention is an ICP etch system. The method according to the present invention can completely remove the burrs of electrode plate, thereby effectively preventing short circuits caused by burrs penetrating the membrane separator in the battery.

Method for removing burrs of battery electrode plates by inductively coupled plasma dry etching

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Jiangsu, China

Ting Zhi