Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

Ting-Yu Shen

Chen-Hua Douglas Yu

Yung-Cheng Lu

Chien-Mo Li

Shwang-Ming Jeng

Hui-Lin Chang

Hung Chun Tsai

Huilin Chang

Kuan-Yen Huang

Yichi Liao

Tien-I Bao

Keng-Chu Lin

Chung-Chi Ko

Chia-Cheng Chou

Circuits, methods, and systems are provided which facilitate testing of asynchronous circuits having one or more global or local feedback loops. A circuit includes a data path and a scan path. The data path has an input configured to receive a data input signal, and a first output. The scan path includes a first multiplexer having a first input configured to receive the data input signal, a latch coupled to an output of the first multiplexer, a scan isolator coupled to an output of the latch, and a second multiplexer having a first input coupled to the first output of the data path and a second input coupled to an output of the scan isolator. The second multiplexer is configured to output a data output signal.

Asynchronous circuits and test methods

Various examples of a circuit and a technique for testing the circuit are disclosed herein. In an example, the circuit includes a data input coupled to a scan multiplexer and a path select multiplexer. The circuit further includes a scan-in input coupled to the scan multiplexer and to receive a value of a scan pattern. The circuit further includes a scan latch to store the value that has an input coupled to the scan multiplexer and an output coupled to the path select multiplexer. The scan multiplexer selects a first signal from the data input and the scan-in input and provides the first signal to the input of the scan latch. The path select multiplexer selects a second signal from the data input and the output of the scan latch and provides the second signal to a data output of the circuit.

Design-for-test for asynchronous circuit elements

An integrated circuit structure includes a semiconductor substrate; a dielectric layer over the semiconductor substrate; a conductive wiring in the dielectric layer; and a metal carbide cap layer over the conductive wiring.

Carbonization of metal caps

A method for forming an integrated circuit includes forming a low-k dielectric layer over a semiconductor substrate, etching the low-k dielectric layer to form an opening, forming a dielectric barrier layer covering at least sidewalls of the opening, performing a treatment to improve a wetting ability of the dielectric barrier layer, and filling the opening with a conductive material, wherein the conductive material is in contact with the dielectric barrier layer.

Low-k interconnect structures with reduced RC delay

An integrated circuit device having at least a bond pad for semiconductor devices and method for fabricating the same are provided. A bond pad has a first passivation layer having a plurality of openings. A conductive layer which overlies the openings and portions of the first passivation layer, having a first portion overlying the first passivation layer and a second portion overlying the openings. A second passivation layer overlies the first passivation layer and covers edges of the conductive layer.

Integrated circuit device

An interconnect structure of an integrated circuit and a method for forming the same are provided. The interconnect structure includes a semiconductor substrate, a low-k dielectric layer over the semiconductor substrate, a conductor in the low-k dielectric layer, and a cap layer on the conductor. The cap layer has at least a top portion comprising a metal silicide/germanide.

Interconnect structure having a silicide/germanide cap layer

Bond pads for semiconductor devices and method for fabricating the same are provided. A bond pad has a first passivation layer having a plurality of openings. A conductive layer which overlies the openings and portions of the first passivation layer, having a first portion overlying the first passivation layer and a second portion overlying the openings. A second passivation layer overlies the first passivation layer and covers edges of the conductive layer.

Bond pads and methods for fabricating the same

A method for forming a semiconductor structure includes providing a substrate comprising a first device region, forming a metal-oxide-semiconductor (MOS) device in the first device region, forming a stressed layer over the MOS device, and performing a post-treatment to modulate a stress of the stressed layer. The post-treatment is selected from the group consisting essentially of ultra-violet (UV) curing, laser curing, e-Beam curing, and combinations thereof.

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JiJi Town, Taiwan

Ting-Yu Shen