Au Optronics Corporation

Ting-Yu Hsu

Chia-Kai Chen

Cheng-Wei Jiang

Pei-Yun Wang

Ya-Qin Huang

Hsiang-Yun Hsiao

Pin-Miao Liu

Kung-Cheng Lin

Shih-Liang Lin

A touch display device includes a first substrate and a second substrate. The first substrate has a signal wire and a display unit which are electrically connected to each other. The second substrate has a conductive circuit and a touch unit which are disposed on one side of the second substrate facing the first substrate. The second substrate includes a touch area and a bending area, the touch unit is disposed in the touch area, and the touch area is stacked on the display unit, and the conductive circuit is disposed in the bending area and is electrically connected to the signal wire. The bending area extends from an edge of the first substrate and is bent to one side of the first substrate facing away from the second substrate.

Touch display device

A flexible panel includes a substrate, a first insulating layer, a second insulating layer, a sacrificial layer, and a metal wiring layer. The substrate has an active area, a peripheral area, and an intermediate area. The first insulating layer is in the three areas of the substrate, and the first insulating layer in the intermediate area has a first pattern. The second insulating layer is on the first insulating layer. The second insulating layer in the intermediate area has a first opening extending along a first direction, so that the second insulating layer does not cover the first pattern of the first insulating layer. The sacrificial layer is between the first insulating layer and the second insulating layer in the intermediate area, and does not cover the first pattern of the first insulating layer. The metal wiring layer extends between the active area and the peripheral area.

Flexible panel and method for manufacturing the same

A method of fabricating a polycrystalline silicon thin film transistor device includes the following steps. A substrate is provided, and a buffer layer having dopants is formed on the substrate. An amorphous silicon layer is formed on the buffer layer having the dopants. A thermal process is performed to convert the amorphous silicon layer into a polycrystalline silicon layer by means of polycrystalization, and to simultaneously out-diffuse a portion of the dopants in the buffer layer into the polycrystalline silicon layer for adjusting a threshold voltage. The polycrystalline silicon layer is patterned to form an active layer. A gate insulating layer is formed on the active layer. A gate electrode is formed on the gate insulating layer. A source doped region and a drain doped region are formed in the active layer.

Polycrystalline silicon thin film transistor device and method of fabricating the same

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Hsin-Chu, Taiwan

Ting-Yu Hsu