Vanguard International Semiconductor Corporation

Ting-Yu Chang

Shao-Chang Huang

Wen-Hsin Lin

Chih-Hsuan Lin

Yeh-Ning Jou

Hwa-Chyi Chiou

Kai-Chieh Hsu

Chieh-Yao Chuang

Hsien-Feng Liao

An ESD protection circuit is coupled to a first pad and includes an ESD detection circuit, a P-type transistor, an N-type transistor, and a discharge circuit. The ESD detection circuit determines whether an ESD event occurs on the first pad to generate a detection signal at a first node. The P-type transistor comprises a source coupled to the first pad, a drain coupled to a second node, and a gate coupled to the first node. The N-type transistor comprises a drain coupled to the second node, a source coupled to a ground, and a gate coupled to a second pad. The discharge circuit is coupled between the first pad and the ground and controlled by a driving signal at the second node. When the ESD protection circuit is in an operation mode, the first pad receives a first voltage, and a second pad receives a second voltage.

Electrostatic discharge protection circuit

Growing community of inventors

Hsinchu County, Taiwan

Ting-Yu Chang