Epistar Corporation

Ting-Yang Lin

Chen Ou

Shih-Kuo Lai

Jia-Rong Chang

A light-emitting device includes a substrate, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; wherein the active layer is a multi-quantum-well (MQW) active layer with a predetermined n-type doping profile. More specifically, the MQW active layer is doped with n-type dopants in the region near the p-type semiconductor layer and the n-type semiconductor layer, and the central region is not doped with the n-type dopants.

Light-emitting device

A light-emitting device includes a substrate, a first nitride semiconductor stack formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor stack, a second nitride semiconductor stack formed on the nitride light-emitting layer, and a first transparent conductive oxide layer formed on the second nitride semiconductor stack. The second nitride semiconductor stack includes a plurality of hexagonal-pyramid cavities formed in an upper surface of the second nitride semiconductor stack. The plurality of hexagonal-pyramid cavities of the second nitride semiconductor stack are filled with the first transparent conductive oxide layer, and a low-resistance ohmic contact is generated at the inner surfaces of the plurality of hexagonal-pyramid cavities so as to decrease the operation voltage and improve light-emitting efficiency of the light-emitting device.

A high-efficiency light-emitting element includes a substrate, a first nitride semiconductor layer formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor layer, and a second nitride semiconductor layer formed on the nitride light-emitting layer including a plurality of hexagonal-pyramid cavities on the surface of the second nitride semiconductor layer opposite to the nitride light-emitting layer.

Growing community of inventors

Hsin-Chu, Taiwan

Ting-Yang Lin