Taiwan Semiconductor Manufacturing Comp. Ltd.

Ting-Ya Cheng

Li-Jui Chen

Han-Lung Chang

Yen-Shuo Su

Chun-Lin Louis Chang

Po-Chung Cheng

Jhan-Hong Yeh

Shi-Han Shann

Jen-Hao Yeh

Henry Yee Shian Tong

Jen-hao Yeh

Yee-Shian Henry Tong

A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.

Target control in extreme ultraviolet lithography systems using aberration of reflection image

An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. A deformable mirror is disposed in a path of the excitation laser. A controller is configured to adjust parameters of the excitation laser by controlling the deformable mirror based on a feedback parameter.

Apparatus and method for generating extreme ultraviolet radiation

A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.

Shock wave visualization for extreme ultraviolet plasma optimization

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Hsinchu, Taiwan

Ting-Ya Cheng