Texas Instruments Corporation

Ting-Ta Yen

Bichoy Bahr

Peter Smeys

Ricky A Jackson

Jeronimo Segovia Fernandez

Brian Goodlin

Ali Kiaei

Jeronimo Segovia-fernandez

Baher S Haroun

Michael Henderson Perrott

Nicholas Stephen Dellas

Kai Yiu Tam

Seong-Ryong Ryu

Ben-yong Zhang

Keegan Shaun Martin

Benjamin Stassen Cook

Anindya Poddar

Barry Jon Male

Ahmad Reza Bahai

Hau Thanh Nguyen

Paul Merle Emerson

Masamitsu Matsuura

Mohammad Hadi Motieian Najar

Mahmud Halim Chowdhury

Hakhamanesh Mansoorzare

Zachary Schaffer

Huiyao Chen

One example described herein includes an integrated circuit (IC). The IC includes a substrate having opposing first and second sides. The second side can include a curved surface. The IC also includes a resonator on the first side. A curvature of the curved surface can reflect a property of the resonator.

Spurious mode reduction for electromechanical resonator circuit

An integrated circuit (IC) resonator module for an IC package includes an acoustic resonator having a surface and a Bragg reflector adhered to the surface of the acoustic resonator. The Bragg reflector includes low impedance layers formed of a first material with a first acoustic impedance and a high impedance layer formed of a second material with a second acoustic impedance. The second acoustic impedance is greater than the first acoustic impedance. The Bragg reflector further includes a Bragg grating layer formed of randomly or periodically spaced patches of the second material separated by vias filled with the first material.

Acoustic resonator

An acoustic-wave device includes a first electrode located over a substrate. A piezoelectric film is located over the first electrode and at least partially overlaps the first electrode. A second electrode is located over the piezoelectric film and at least partially overlaps the first electrode and the piezoelectric film. A temperature sensor is located in a same layer level as the first or second electrode. A heater may also be located in a same layer level as the first electrode. A closed-loop system may operate using the temperature sensor and the heater to maintain an operating temperature that provides highly stable operation.

Bulk acoustic wave device with integrated temperature sensor and heater

In one example, a semiconductor device includes an acoustic medium, a first transducer on the acoustic medium, a first electrode coupled to the first transducer, a second transducer on the acoustic medium, and a second electrode coupled to the second acoustic transducer. The semiconductor device also includes a semiconductor substrate to support the acoustic medium and first and second transducers. Mold compound encapsulates at least a portion of the acoustic medium, the first acoustic transducer, the second acoustic transducer, and the semiconductor substrate.

Acoustic isolator

A micro-mechanical resonator die includes: micro-mechanical resonator die layers; a cavity formed in at least one of the micro-mechanical resonator die layers; and a micro-mechanical resonator suspended in the cavity. The micro-mechanical resonator includes: a base; a first resonator portion extending from the base along a first plane; and a second resonator portion extending from the base along a second plane. The first resonator portion is configured to operate in an out-of-plane flexural mode that displaces at least part of the first resonator portion out of the first plane. The second resonator portion is configured to operate in an out-of-plane flexural mode that displaces at least part of the second resonator portion out of the second plane and out-of-phase relative to the first resonator portion.

Micro-mechanical resonator having out-of-phase and out-of-plane flexural mode resonator portions

A tunable bulk acoustic wave (BAW) resonator includes: a first electrode adapted to be coupled to an oscillator circuit; a second electrode adapted to be coupled to the oscillator circuit; and a piezoelectric layer between the first electrode and the second electrode; and a Bragg mirror. The Bragg mirror has: a metal layer; and a dielectric layer between the metal layer and either of the first electrode or the second electrode. The tunable BAW resonator also includes: a radio-frequency (RF) signal source having a first end and a second end, the first end coupled to the first electrode, and the second end coupled to the second electrode; and an amplifier circuit between either the first electrode or the second electrode and the Bragg mirror metal layer.

Tunable bulk acoustic wave (BAW) resonator based on application of radio-frequency (RF) signal to Bragg mirror metal layer

In one example, a method of forming a bulk acoustic wave (BAW) resonator comprises: forming an electrode on at least one of a semiconductor substrate, a sacrificial layer, or an acoustic reflector; and forming a piezoelectric layer on the electrode, the piezoelectric layer having a convex surface.

Bulk acoustic wave resonators having convex surfaces, and methods of forming the same

In a described example, an apparatus includes: a first semiconductor die with a component on a first surface; a second semiconductor die mounted on a package substrate and having a third surface facing away from the package substrate; a solder seal bonded to and extending from the first surface of the first semiconductor die flip chip mounted to the third surface of the second semiconductor die, the solder seal at least partially surrounding the stress sensitive component; a first solder joint formed between the solder seal and the third surface of the second semiconductor die; a second solder joint formed between solder at an end of the post connect and the third surface of the second semiconductor die; and a mold compound covering the second surface of the first semiconductor die, a portion of the second semiconductor die, and an outside periphery of the solder seal.

Package for stress sensitive component and semiconductor device

A semiconductor system includes a substrate. The substrate has a front side and a back side. A device is formed on the front side of the substrate. A vertical spring is etched in the substrate about the device. A trench is etched in the front side of the substrate about the device. A wall of the trench forms a side of the vertical spring.

Stress isolation using three-dimensional trenches

In bulk acoustic wave (BAW) resonators having convex surfaces, an example BAW resonator includes a first electrode, a piezoelectric layer formed on the first electrode, the piezoelectric layer having a convex surface, and a second electrode formed on the convex surface. An example integrated circuit (IC) package includes a BAW resonator in the IC package, the BAW resonator including a piezoelectric layer having a convex surface.

A laterally vibrating bulk acoustic wave (LVBAW) resonator includes a piezoelectric plate sandwiched between first and second metal layers. The second metal layer is patterned into an interdigital transducer (IDT) with comb-shaped electrodes having interlocking fingers. The width and pitch of the fingers of the electrodes determine the resonant frequency. A combined thickness of the first and second metal layers and the piezoelectric layer is less than the pitch of the interlocking fingers.

Laterally vibrating bulk acoustic wave resonator

A temperature compensated oscillator circuit includes a first oscillator, a second oscillator, a first divider, a second divider, a frequency ratio circuit, and a temperature compensation circuit. The first divider is coupled to the first oscillator, and is configured to divide a frequency of a first oscillator signal generated by the first oscillator. The second divider is coupled to the second oscillator, and is configured to divide a frequency of a second oscillator signal generated by the second oscillator. The frequency ratio circuit is coupled to the first divider and the second divider, and is configured to determine a frequency ratio of an output of the first divider to an output of the second divider. The temperature compensation circuit is coupled to the frequency ratio circuit and the first oscillator, and is configured to generate a compensated frequency based on the frequency ratio and the first oscillator signal.

BAW oscillators with dual BAW temperature sensing

A resonator includes a substrate, an acoustic Bragg mirror disposed above the substrate, and a bottom metal layer disposed above the acoustic Bragg mirror. The resonator also includes a piezoelectric plate disposed above the bottom metal layer. The resonator further includes a top metal layer disposed above the piezoelectric plate. The top metal layer comprises multiple fingers within a single plane and the width of each of the fingers is between 75%-125% of a thickness of the piezoelectric plate.

Highly dispersive bulk acoustic wave resonators

An example integrated circuit package includes an acoustic wave resonator, the acoustic wave resonator including a Fresnel surface. In some examples, the Fresnel surface includes a plurality of recessed features and/or protruding features at different locations on the Fresnel surface, each of the plurality of features to confine main mode acoustic energy from a respective portion of the Fresnel surface in a central portion of the acoustic wave resonator.

Acoustic wave resonators having fresnel surfaces

A micromechanical system (MEMS) acoustic wave resonator is formed on a base substrate. A piezoelectric member is mounted on the base substrate. The piezoelectric member has a first electrode covering a first surface of the piezoelectric member and a second electrode covering a second surface of the piezoelectric member opposite the first electrode, the second electrode being bounded by a perimeter edge. A first guard ring is positioned on the second electrode spaced apart from the perimeter edge of the second electrode.

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Ting-Ta Yen