Taiwan Semiconductor Manufacturing Comp. Ltd.

Ting-Sheng Huang

Jiaw-Ren Shih

Jhong-Sheng Wang

Min-Chie Jeng

Ke-Wei Su

Li-Chung Hsu

Chung-Kai Lin

Cheng Yuan Hsiao

Yi-Shun Huang

Ya-Chin Liang

Wai-Kit Lee

Jen-Hao Lee

Juan-Yi Chen

Shih-Hsin Chen

A semiconductor device includes a substrate, a first transistor on the substrate, and a second transistor on the substrate. The first transistor has a first threshold voltage, and a channel region and source/drain regions of the first transistor are N-type. The second transistor has a second threshold voltage, a channel region of the second transistor is N-type and source/drain regions of the second transistor are P-type, and an absolute value of the first threshold voltage is substantially equal to an absolute value of the second threshold voltage.

Breakdown resistant semiconductor apparatus and method of making same

A method for establishing an aging model of a device is provided. The device is measured to obtain degradation information of the device under an operating condition, wherein the device is a physical device. The degradation information is partitioned into a permanent degradation portion and an impermanent degradation portion. The impermanent degradation portion is differentiated by time to obtain a differential value. The aging model is obtained according to the differential value. When the differential value is greater than zero, a degradation of the device increases over time, and when the differential value is less than zero, the degradation of the device decreases over time.

Method for establishing aging model of device and analyzing aging state of device with aging model

An integrated circuit (IC) and a method for operating the IC are provided. The IC comprises a device under test and a first heater. The first heater is located at a first side of the device and provides heat to control a temperature of the device. The first heater comprises a semiconductor device having a first doped region and a second doped region having a conductivity type opposite to that of the first doped region, the first doped region interfacing with the second doped region.

Semiconductor structure and method for operating the same

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Hsinchu County, Taiwan

Ting-Sheng Huang