National Technology & Engineering Solutions of Sandia, LLC

Sandia Corporation

Ting S Luk

Salvatore Campione

Michael B Sinclair

Darwin K Serkland

Jon Ihlefeld

Michael Wood

Gordon Arthur Keeler

Kent M Geib

Joshua Shank

Igal Brener

Peter Anand Sharma

Tzu-Ming Lu

Isak C Reines

Nche Tumasang Fofang

Charles Thomas Harris

A nanoscale bolometer for infrared (IR) thermal imaging comprises a subwavelength antenna that provides a specific detectivity approaching a fundamental, thermodynamic limit. The uncooled nanobolometer achieves performance comparable to cooled, high-performance, semiconductor photodetectors, but with significantly reduced size, weight, power, and cost.

Nanoscale bolometer operating near the thermodynamic limit

An electroabsorption modulator that operates based on electroabsorption of a surface plasmon polariton mode is improved by various structural changes and/or selection of different materials. For example, at least a portion of the waveguide may be made to be conductive, e.g., by doping. Also, layers that make up the modulator structure may be placed along sides of waveguides in addition to or instead of simply on the top thereof. High permittivity gate dielectric materials may be employed. Also, materials other than ITO may be employed as a transparent conductor. Such an improved plasmonic electroabsorption modulator can be fabricated using standard semiconductor processing techniques and may be integrated with standard photonic integrated circuits, including silicon photonics and compound semiconductor-based platforms. Advantageously, high-speed, low-voltage operation over a wide spectrum of wavelengths may be achieved.

Electroabsorption optical modulator

A method of optical modulation in a non-resonant epsilon-near-zero (EMZ) plasmonic electro-optical modulator is provided. An optical carrier is injected into a waveguide optically coupled to a layer of transparent conductive material having an epsilon-near-zero (ENZ) wavelength. The transparent conductive material layer constitutes a portion of a capacitive structure that includes a gate dielectric layer. A time-varying bias voltage applied across the gate dielectric layer shifts the ENZ wavelength toward the carrier wavelength, and thereby impresses a phase modulation pattern on the carrier wave.

Methods of epsilon-near-zero optical modulation

Efficient harmonic light generation can be achieved with ultrathin films by coupling an incident pump wave to an epsilon-near-zero (ENZ) mode of the thin film. As an example, efficient third harmonic generation from an indium tin oxide nanofilm (&#x3bb;/42 thick) on a glass substrate for a pump wavelength of 1.4 &#x3bc;m was demonstrated. A conversion efficiency of 3.3&#xd7;10was achieved by exploiting the field enhancement properties of the ENZ mode with an enhancement factor of 200. This nanoscale frequency conversion method is applicable to other plasmonic materials and reststrahlen materials in proximity of the longitudinal optical phonon frequencies.

Photon energy conversion by near-zero permittivity nonlinear materials

A novel thermal source comprising a semiconductor hyperbolic metamaterial provides control of the emission spectrum and the angular emission pattern. These properties arise because of epsilon-near-zero conditions in the semiconductor hyperbolic metamaterial. In particular, the thermal emission is dominated by the epsilon-near-zero effect in the doped quantum wells composing the semiconductor hyperbolic metamaterial. Furthermore, different properties are observed for s and p polarizations, following the characteristics of the strong anisotropy of hyperbolic metamaterials.

Thermal emitter comprising near-zero permittivity materials

The efficiency of a photovoltaic cell is enhanced by light trapping using Mie-scattering nanostructures. In one embodiment, an array of nanocylinders is formed on the front surface of a silicon film to enhance forward scattering into the film, and an array of nanocylinders is formed on the back surface to enhance backscattering so that more light is absorbed within the silicon film. In an alternate embodiment, a mirror layer is formed on the back surface of the silicon film to reflect light within the film back toward the front-surface nanocylinder array.

Growing community of inventors

Albuquerque, NM, United States of America

Ting S Luk