Cypress Semiconductor Corporation

Other

North American Philips Corporation

North American Philips Corp, Signetics Division

Ting P Yen

Sheldon C Lim

Julie W Hellstrom

Philippe Schoenborn

Alexander H Owens

Pamela Shiell Trammel

A method of forming a localized oxidation having reduced bird's beak encroachment in a semiconductor device by providing an opening in the silicon substrate that has sloped sidewalls with a taper between about 10&deg; and about 75&deg; as measured from the vertical axis of the recess opening and then growing field oxide within the tapered recess opening for forming the localized oxidation.

Method of forming local oxidation with sloped silicon recess

A semiconductor structure that includes a silicon substrate which has a top surface, a diffusion region formed in the substrate adjacent to the top surface, a polysilicon gate formed on the top surface of the substrate adjacent to but not contacting the diffusion region, an insulator layer substantially covers the polysilicon gate and the diffusion region, the layer contains a via opening therein, and an electrically conducting plug filling at least partially the via opening providing electrical communication between the polysilicon gate and the diffusion region.

Metal plug local interconnect

A conducting trench in a dielectric layer can function as both (a) a plurality of contacts and (b) an interconnect in a semiconductor device. The conducting trench may be made by depositing a conductor in a trough formed in a dielectric layer of the device.

Method of forming robust interconnect and contact structures in a

The size of a fusible link (22 C.sub.F) created from part of a metal layer (22) is controlled by an oxidation performed in a deposition chamber that is also used for depositing a dielectric layer (30) over the fuse structure. The metal layer serves as a diffusion barrier between semiconductor material (14 and 16) and another metal layer (24).

Programmable semiconductor integrated circuits having fusible links

The size of a fusible link (22C.sub.F) created from part of a metal layer (22) is controlled by an oxidation performed in a deposition chamber that is also used for depositing a dielectric layer (30) over the fuse structure. The metal layer serves as a diffusion barrier between semiconductor material (14 and 16) and another metal layer (24).

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Fremont, CA, United States of America

Ting P Yen