Winbond Electronics Corporation

Ting-Kuo Yen

Jun-Lin Yeh

Poongyeub Lee

Tzeng-Ju Hsu

In an aspect of the disclosure, a reference voltage holding circuit is provided. The reference voltage holding circuit is for maintaining a sense amplifier reference voltage provided by a sense amplifier reference circuit, and the reference voltage holding circuit includes: a reference voltage generating circuit configured to provide a bias reference voltage; a current generating circuit electrically coupled to the reference voltage generating circuit and configured to receive the bias reference voltage to output a standby bias voltage and a standby bias current; and a voltage pull-up circuit electrically coupled to the current mirror circuit and configured to provide for the standby bias current and to maintain the standby bias voltage which drives the sense amplifier reference voltage when reference voltage holding circuit operates under a standby operation and approximates the sense amplifier reference voltage as long as the sense amplifier reference voltage remains enabled.

Sense amplifier circuit with reference voltage holding circuit for maintaining sense amplifier reference voltage when the sense amplifier operates under standby mode

A voltage generator adapted for a flash memory is disclosed. The voltage generator includes a charge pump circuit and a voltage regulator. The charge pump circuit includes at least one charge pump unit having a voltage receiving terminal and a voltage transmitting terminal. The voltage receiving terminal receives a reference voltage and the voltage transmitting terminal generates an output voltage. The charge pump unit includes first and second voltage transmitting channels and first and second capacitors. The first and second voltage transmitting channels are turned on or off according first and second control signals, respectively. The first and second capacitors receive the first and second pump enabling signals, respectively. The voltage regulator outputs a regulated output voltage according to the output voltage.

Voltage generator

A flash memory is disclosed. A core array stores data. A peripheral circuit accesses the data stored in the core array to generate read data. A off-chip driver (OCD) processes the read data to generate output data. An interconnect structure is electrically connected to the core array, the peripheral circuit, and the OCD and includes three conductive layers. The conductive layers are electrically connected to each other. An uppermost conductive layer is formed over the interconnect structure, electrically connected to the interconnect structure, and includes a first power pad and first power tracks. The first power pad is electrically connected to a power pin via a first bonding wire to receive an operation voltage. The first power tracks are electrically connected between the first power pad and the interconnect structure to transmit the operation voltage to at least one of the core array, the peripheral circuit and the OCD.

Growing community of inventors

Taichung, Taiwan

Ting-Kuo Yen