United Microelectronics Corp.

Ting-Kuo Kang

Yi-Fan Chen

Chia-Jen Kao

The present invention utilizes wafer acceptance testing equipment to fast monitor the quality of an insulation layer. A plurality of swing time-dependent DC ramping voltages are applied to one of the electrode plates in a capacitor and each corresponding leakage current is measured to calculate each corresponding &#x3b2; value. Then, a ratio of each &#x3b2; value is calculated and a &#x3b2;-voltage curve is plotted to actually simulate the device failure.

Method for monitoring quality of an insulation layer

The present invention utilizes to wafer acceptance testing equipment to fast monitor the quality of a tunnel oxide layer. First, a control gate and a floating gate in a memory cell are electrically connected. Then a plurality of swing time-dependent DC ramping voltages are applied and each corresponding gate leakage current is measured to calculate each corresponding &#x3b2; value. Finally a ratio of each &#x3b2; value is calculated and a &#x3b2;-gate voltage curve is plotted to actually simulate the device failure.

Growing community of inventors

Kao-Hsiung Hsien, Taiwan

Ting-Kuo Kang