United Microelectronics Corp.

Ting-Hao Chang

Chun-Hsien Huang

Yu-Tse Kuo

Shu-Ru Wang

Hung-Chan Lin

Chun-Yen Tseng

Ching-Cheng Lung

Hsin-Wen Chen

Hsin-Chih Yu

Chi-Chang Shuai

Shih-Hao Liang

Hsien-Hung Tsai

The present invention provides a memory device, the memory device includes a first region having a plurality of oxide semiconductor static random access memories (OSSRAM) arranged in a first direction, and each of the OSSRAMs comprising a static random access memory (SRAM) and at least an oxide semiconductor dynamic random access memory (DOSRAM), wherein the DOSRAM is connected to the SRAM, wherein each of the DOSRAMs comprises an oxide semiconductor gate (OSG), and each of the OSGs extending in a second direction perpendicular to the first direction, and an oxide semiconductor channel extending in the first direction, an oxide semiconductor gate connection extending in the first direction to connect each of the OSGs, and a word line, a Vcc connection line and a Vss connection line extend in the first direction and are connected to the SRAMs in each OSSRAM.

Memory device with oxide semiconductor static random access memory and method for operating the same

An array of dynamic random access memory cells includes a first set of memory cell pairs in a first row, a second set of memory cells in a second row, and a first set of bit line contacts in the first row. The second set of memory cell pairs are disposed adjacent to the first set of memory cell pairs, and each two of the memory cell pairs in the second row include a common S/D region. Each of the first set of bit line contacts is electrically coupled to each of the common S/D regions of the memory cell pairs in the second row respectively.

Array of dynamic random access memory cells

Growing community of inventors

Hsinchu County, Taiwan

Ting-Hao Chang