Advanced Micro Devices Corporation

Ting H Yuan

Clive Martin Jones

Jin Zhao

Bob Anderson

Various methods of fabricating a tungsten conductor structure are provided. In one aspect, a method of fabricating a tungsten conductor structure in an opening in an insulating film is provided that includes forming a titanium nitride film in the opening and heating the a titanium nitride film. The titanium nitride film is exposed to a flow of hydrogen gas and a flow of an inert carrier gas. The titanium nitride film is exposed to a flow of silane at a first flow rate for a first time interval and to a flow of tungsten hexafluoride for a second time interval that begins after the beginning but prior to the end of the first time interval. The flow of silane is reduced at the end of the first time interval to a second flow rate and maintained at the second flow rate for a third time interval. Fluorine diffusion into the titanium nitride film and the potential for void formation due to non-conformal tungsten deposition are reduced.

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Austin, TX, United States of America

Ting H Yuan