Epistar Corporation

Ting-Chia Ko

De-Shan Kuo

Chun-Hsiang Tu

Po-Shun Chiu

Tsun-Kai Ko

Chien-Kai Chung

Chien-Fu Shen

Schang-Jing Hon

Ta-Cheng Hsu

Jung-Min Hwang

Min-Hsun Hsieh

Ya-Lan Yang

Chia-Liang Hsu

Chen Ou

Hui-Chun Yeh

Min-Yen Tsai

Ching-San Tao

Chung-Hsiang Tu

Min-Hsun Liu

Ya Lan Yang

A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

Electrode structure of light emitting device

Light emitting device

A light-emitting device comprises a first semiconductor layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises an adhesion layer on the second semiconductor layer, a conductive layer on the adhesion layer, and a bonding layer on the conductive layer, and wherein the electrode structure comprises a center region and an edge region, a thickness of each layer of the edge region of the electrode structure is smaller than that of the center region.

Light emitting device having multi-layered electrode structure

A light-emitting device includes a semiconductor light emitting stack and an electrode on the semiconductor light emitting stack, wherein the electrode includes a mirror layer, an adhesion layer inserted between the mirror layer and the semiconductor light emitting stack, a bonding layer, and a barrier layer inserted between the mirror layer and the bonding layer and covering the mirror layer to prevent the mirror layer from reacting with the bonding layer, wherein the barrier layer includes a first pair of different metals.

Light emitting device with reflective electrode

A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature.

Method for manufacturing high efficiency light-emitting diodes

A light-emitting device comprises a first semiconductor layer; and a transparent conductive oxide layer comprising a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region.

Light-emitting device

A light-emitting element includes: a substrate being a monocrystalline structure, comprising a plurality of recesses; and a plurality of first light-emitting stacks formed in the recesses respectively.

Light-emitting element and the manufacturing method thereof

A light-emitting device includes: a substrate; a first semiconductor layer disposed on the substrate and having a first surface; a rough structure formed in the first semiconductor layer, the rough structure comprising porous structures formed therein and a portion of the porous structures having openings exposed on the first surface of the first semiconductor layer; and an active layer formed on the first semiconductor layer.

A light-emitting diode structure comprising: a substrate; a light-emitting semiconductor stack on the substrate, wherein the light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with different polarity from the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrical pad on the substrate, wherein the first electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the first semiconductor layer; and a second electrical pad on the substrate, wherein the second electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the second semiconductor layer, wherein the first electrical pad and the second electrical pad are not higher than the light-emitting semiconductor stack.

Growing community of inventors

Hsinchu, Taiwan

Ting-Chia Ko