United Microelectronics Corp.

Ting-Cheng Tseng

Ming-Jui Chen

Chia-Wei Huang

Hui-Fang Kuo

Chun-Hsien Huang

Cheng-Te Wang

Tan-Ya Yin

Ping-I Hsieh

Shih-Hsun Kuo

A method for decomposing a layout of an integrated circuit is provided. First, a layout of the integrated circuit is imported, wherein the layout comprises a plurality of sub patterns in a cell region, and a first direction and a second direction are defined thereon. Next, one sub pattern positioned at a corner of the cell region is assigned to an anchor pattern. Then, the sub patterns in the row same as the anchor pattern along the second direction is assigned to the first group. Finally, the rest of the sub patterns are decomposed into the first group and the second group according to a design rule, wherein the sub patterns in the same line are decomposed into the first group and the second group alternatively.

Method for decomposing a layout of an integrated circuit

A manufacturing method for forming a semiconductor structure includes: first, a plurality of fin structures are formed on a substrate and arranged along a first direction, next, a first fin cut process is performed, so as to remove parts of the fin structures which are disposed within at least one first fin cut region, and a second fin cut process is then performed, so as to remove parts of the fin structures which are disposed within at least one second fin cut region, where the second fin cut region is disposed along at least one edge of the first fin cut region.

Method for forming a semiconductor structure

A mask set for double exposure process and method of using said mask set. The mask set is provided with a first mask pattern having a first base and a plurality of first teeth and protruding portions, and a second mask pattern having a second base and a plurality of second teeth, wherein the second base may at least partially overlap the first base such that each of the protruding portions at least partially overlaps one of the second teeth.

Mask set for double exposure process and method of using the mask set

A method for patterning a semiconductor structure is provided. The method comprises following steps. A first mask defining a first pattern in a first region and a second pattern in a second region adjacent to the first region is provided. The first pattern defined by the first mask is transferred to a first film structure in the first region, and the second pattern defined by the first mask is transferred to the first film structure in the second region. A second film structure is formed on the first film structure. A second mask defining a third pattern in the first region is provided. At least 50% of a part of the first region occupied by the first pattern defined by the first mask is identical with a part of the first region occupied by the third pattern defined by the second mask.

Method for patterning semiconductor structure

A method for separating photomask pattern, including the following steps: first, a layout pattern is provided, wherein the layout pattern is defined to have at least one critical pattern and at least one non-critical pattern. Then, a first split process is performed to separate the critical pattern into a plurality of first patterns and a plurality of second patterns. A second split process is performed to separate the non-critical pattern into a plurality of third patterns and a plurality of fourth patterns. Finally, the first patterns and the third patterns are output to a first photomask, and the second patterns and the fourth patterns are output to a second photomask.

Method for separating photomask pattern

A method for designing a stressor pattern is described, wherein the stressor pattern is used to form S/D regions of a second-type MOS transistor. A first distance between a boundary of the stressor pattern and a first active area of a first-type MOS transistor is derived. If the first distance is less than a safe distance, the stressor pattern is shrunk to make the first distance at least equal to the safe distance.

Method for designing stressor pattern

An optical proximity correction method is provided. A target pattern is provided, and then the target pattern is decomposed to a first pattern and a second pattern. The first pattern and the second pattern are alternately arranged in a dense region. Then, a compensation pattern is provided and it is determined whether the compensation pattern is added into the first pattern to become a first revised pattern, or into the second pattern to become a second revised pattern. Finally, the first revised pattern is output onto a first mask and the second revised pattern is output onto a second mask.

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Tainan, Taiwan

Ting-Cheng Tseng