Yangtze Memory Technologies Co., Ltd.

Ting Cheng

Hongtao Liu

XiangNan Zhao

Lei Jin

Yuanyuan Min

Xuezhun Xie

Shiyu Xia

A three-dimensional (3D) memory device and method for reading the same are provided. The device includes memory cell strings each including multiple memory cells. In each memory cell string, a topmost memory cell is connected to a top selection gate connected to a bit line, and a bottommost memory cell is connected to a bottom selection gate. The method includes sequentially programming multiple memory cells in a memory cell string according to a programming sequence; in reading a memory cell, applying a corresponding bit line voltage to the memory cell string according to the programming sequence of the memory cell.

Growing community of inventors

Wuhan, China

Ting Cheng