Intel Corporation

Ting Chen

Jack T Kavalieros

Tahir Ghani

Van H Le

Abhishek A Sharma

Bernhard Sell

Fatih Hamzaoglu

Travis W LaJoie

Chieh-Jen Ku

Pei-Hua Wang

Shem Ogadhoh

Allen B Gardiner

Juan G Alzate Vinasco

Umut Arslan

Nikhil Mehta

Akash Garg

Gregory George

Julie Rollins

Vinaykumar Hadagali

Embodiments herein describe techniques for a semiconductor device having an interconnect structure including an inter-level dielectric (ILD) layer between a first layer and a second layer of the interconnect structure. The interconnect structure further includes a separation layer within the ILD layer. The ILD layer includes a first area with a first height to extend from a first surface of the ILD layer to a second surface of the ILD layer. The ILD layer further includes a second area with a second height to extend from the first surface of the ILD layer to a surface of the separation layer, where the first height is larger than the second height. Other embodiments may be described and/or claimed.

Intermediate separation layers at the back-end-of-line

Growing community of inventors

Portland, OR, United States of America

Ting Chen