Growing community of inventors

Portland, OR, United States of America

Ting Chang

Average Co-Inventor Count = 5.94

ph-index = 2

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 17

Ting ChangWalid M Hafez (18 patents)Ting ChangRahul Ramaswamy (15 patents)Ting ChangHsu-Yu Chang (14 patents)Ting ChangTanuj Trivedi (12 patents)Ting ChangJeong Dong Kim (11 patents)Ting ChangBabak Fallahazad (11 patents)Ting ChangNidhi Nidhi (10 patents)Ting ChangChia-Hong Jan (7 patents)Ting ChangRoman W Olac-Vaw (3 patents)Ting ChangNeville L Dias (3 patents)Ting ChangPei-Chi Liu (3 patents)Ting ChangKinyip Phoa (1 patent)Ting ChangAyan Kar (1 patent)Ting ChangBenjamin Orr (1 patent)Ting ChangRohan K Bambery (1 patent)Ting ChangDaniel B O'Brien (1 patent)Ting ChangChristopher Alan Nolph (1 patent)Ting ChangTing Chang (19 patents)Walid M HafezWalid M Hafez (169 patents)Rahul RamaswamyRahul Ramaswamy (45 patents)Hsu-Yu ChangHsu-Yu Chang (31 patents)Tanuj TrivediTanuj Trivedi (13 patents)Jeong Dong KimJeong Dong Kim (11 patents)Babak FallahazadBabak Fallahazad (11 patents)Nidhi NidhiNidhi Nidhi (39 patents)Chia-Hong JanChia-Hong Jan (147 patents)Roman W Olac-VawRoman W Olac-Vaw (22 patents)Neville L DiasNeville L Dias (17 patents)Pei-Chi LiuPei-Chi Liu (12 patents)Kinyip PhoaKinyip Phoa (24 patents)Ayan KarAyan Kar (17 patents)Benjamin OrrBenjamin Orr (7 patents)Rohan K BamberyRohan K Bambery (4 patents)Daniel B O'BrienDaniel B O'Brien (3 patents)Christopher Alan NolphChristopher Alan Nolph (1 patent)
..
Inventor’s number of patents
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Strength of working relationships

Company Filing History:

1. Intel Corporation (19 from 54,664 patents)


19 patents:

1. 12453145 - Single gated 3D nanowire inverter for high density thick gate SoC applications

2. 12369358 - Co-integrated high performance nanoribbon transistors with high voltage thick gate finFET devices

3. 12349411 - Gate-all-around integrated circuit structures having dual nanoribbon channel structures

4. 12249622 - Nanoribbon thick gate devices with differential ribbon spacing and width for SOC applications

5. 12089411 - Self-aligned front-end charge trap flash memory cell and capacitor design for integrated high-density scaled devices

6. 12040395 - High voltage extended-drain MOS (EDMOS) nanowire transistors

7. 11996403 - ESD diode solution for nanoribbon architectures

8. 11862703 - Gate-all-around integrated circuit structures having dual nanoribbon channel structures

9. 11791380 - Single gated 3D nanowire inverter for high density thick gate SOC applications

10. 11581404 - Gate-all-around integrated circuit structures having depopulated channel structures

11. 11437483 - Gate-all-around integrated circuit structures having dual nanoribbon channel structures

12. 11094782 - Gate-all-around integrated circuit structures having depopulated channel structures

13. 10847456 - Antifuse element using spacer breakdown

14. 10763209 - MOS antifuse with void-accelerated breakdown

15. 10312367 - Monolithic integration of high voltage transistors and low voltage non-planar transistors

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