Spansion Llc.

Advanced Micro Devices Corporation

Cerium Laboratories, LLC

Timothy Z Hossain

Clayton Fullwood

Dan E Posey

Patrick Mark Clopton

Christopher F Lyons

Greg Alan Goodwin

Christopher Foster

Amiya R Ghatak-Roy

Charles E May

Richard C Blish

Allen Lewis Evans

Jason B Zanotti

Clayton Fulwood

A method of preparing a surface includes applying rough material layer to a surface of a support material. The rough material layer has a thickness in a range of 50 nm to 5 micrometers and a roughness Ra in a range of 10 nm to 1 micrometer. The method includes depositing a ceramic nitride or oxynitride over the rough material layer. In an example, a vehicle includes a structural support and a component comprising a support material defining an exterior facing surface and a ceramic nitride or oxynitride layer disposed over the support material.

Enhanced surface treatments

A method of testing for impurities includes directing an x-ray source toward a surface at an angle &#x3b1; relative to the plane of the surface, the surface defined by a ceramic coating over a crystalline substrate; detecting x-ray fluorescent radiation emitted from the ceramic coating at an angle &#x3b8; different from the angle &#x3b1; and its supplementary angle; and comparing characteristics of the detected x-ray fluorescent radiation to characteristics associated with impurities.

System and method for testing ceramic coatings

An assembly includes an integrated circuit, a film layer disposed over the integrated circuit and having a thickness of at least 50 microns, and a thermal neutron absorber layer comprising at least 0.5% thermal neutron absorber. The thermal neutron absorber layer can be a glass layer or can include a molding compound.

Soft error resistant circuitry

An imaging device suitable for detecting certain imaging particles and recording the detection of imaging particles, and as such can include certain recording devices such as a charge storage structure.

Imaging device having a radiation detecting structure sensitive to neutron radiation

Systems and methods are described herein for detecting particles emitted by nuclear material. The systems comprise one or more semiconductor devices for detecting particles emitted from nuclear material. The semiconductor devices can comprise a charge storage element comprising several layers. A non-conductive charge storage layer enveloped on top and bottom by dielectric layers is mounted on a substrate. At least one top semiconductor layer can be placed on top of the top dielectric layer. A reactive material that reacts to particles, such as neutrons emitted from nuclear material, can be incorporated into the top semiconductor layer. When the reactive material reacts to a particle emitted from nuclear material, ions are generated that can alter the charge storage layer and enable detection of the particle.

Charge storage device for detecting alpha particles

System and method for detecting particles with a semiconductor device

Imaging device having a radiation detecting structure disposed at a semiconductor substrate with a thermalizing material and a first radiation-reactive material sensitive to neutron radiation

A method of operating an electronic device including determining an initial charge level at a non-volatile charge storage structure of a radiation-sensitive device including a radiation-reactive material and determining if a first radiation event has occurred based upon the non-volatile charge storage device having a different charge level than the initial charge level. The method further includes identifying the first radiation event as associated with either a first type of radiation or a second type of radiation based upon the different charge level.

Radiation detecting electronic device and methods of operating

In one aspect of the present invention, a method of forming a layer of silicide on a surface of a silicon-containing structure surface that is separated from a first structure by a second structure is provided. The method includes the steps of forming a layer of silicide-forming material on the surface of the silicon-containing structure, and the first and second structures. The layer of silicide-forming material is annealed in an ambient containing a nitrogen bearing species at a pressure greater than about one atmosphere to form the layer of silicide on the surface of the silicon-containing structure. The nitrogen bearing species reacts with the silicide-forming material to retard the formation of silicide on the third structure. The method reduces the potential for silicide bridging between, for example, the gate and source/drain regions of a transistor during silicide contact formation.

High pressure N2 RTA process for TiS2 formation

A tungsten gate electrode and method of fabricating the same are provided. In one aspect, a method of fabricating a gate electrode stack on a substrate is provided that includes forming an insulating film on the substrate and forming a conductor film on the insulating film by initially depositing a film of amorphous silicon and amorphous tungsten, and thereafter depositing a film of polycrystalline tungsten on the film and annealing the substrate to react the amorphous silicon with the amorphous tungsten to form tungsten silicide on the insulating film and to increase the grain structure of the polycrystalline tungsten film. The tungsten silicide film and the polycrystalline tungsten film are patterned to define the gate electrode stack. The method enables the seamless fabrication of an adhesion layer and a tungsten gate in a single chamber and without resort to titanium.

Tungsten gate method and apparatus

A tungsten gate electrode and method of fabricating the same are provided. In one aspect, a method of fabricating a circuit device in an opening in an insulating film on a substrate is provided. The method includes depositing a film of amorphous silicon and amorphous tungsten in the opening, and thereafter depositing a film of polycrystalline tungsten on the film and annealing the substrate to react the amorphous silicon with the amorphous tungsten to form tungsten silicide on the insulating film and to increase the grain structure of the polycrystalline tungsten film. The tungsten silicide film and the polycrystalline tungsten film may be planarized to the insulating film. The method enables the seamless fabrication of an adhesion layer and a tungsten conductor structure in a single chamber and without resort to titanium.

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Austin, TX, United States of America

Timothy Z Hossain