Taiwan Semiconductor Manufacturing Comp. Ltd.

Timothy Vasen

Gerben Doornbos

Mark Van Dal

Blandine Duriez

Martin Christopher Holland

Matthias Passlack

A method includes placing a first charged metal dot on a first position of a surface of a semiconductor substrate. A first charged region is formed on a second position of the surface of the semiconductor substrate. A precursor gas is flowed along a first direction from the first position toward the second position on the semiconductor substrate, thereby forming a first carbon nanotube (CNT) on the semiconductor substrate. A dielectric layer is deposited to cover the first CNT and the semiconductor substrate. A second charged metal dot is placed on a third position of a surface of the dielectric layer. A second charged region is formed on a fourth position of the surface of the dielectric layer. The precursor gas is flowed along a second direction from the third position toward the fourth position on the semiconductor substrate, thereby forming a second CNT on the first CNT.

Method of forming semiconductor device having carbon nanotube

In a method of forming a gate-all-around field effect transistor (GAA FET), a bottom support layer is formed over a substrate and a first group of carbon nanotubes (CNTs) are disposed over the bottom support layer. A first support layer is formed over the first group of CNTs and the bottom support layer such that the first group of CNTs are embedded in the first support layer. A second group of carbon nanotubes (CNTs) are disposed over the first support layer. A second support layer is formed over the second group of CNTs and the first support layer such that the second group of CNTs are embedded in the second support layer. A fin structure is formed by patterning at least the first support layer and the second support layer.

Growing community of inventors

Linthicum Heights, MD, United States of America

Timothy Vasen