Diodes Inc.

Diodes Fabtech, Inc.

Timothy S Eastman

Roman Hamerski

Christopher Daniel Hruska

James Man-Fai Hong

Jonathan Moult

Johnny Duc Van Chiem

Zerui Chen

In one embodiment the present invention includes a semiconductor rectifier device comprising a first, second, and third semiconductor regions and a gate. The first semiconductor region is of a first conductivity type. The second semiconductor region is adjacent to the first semiconductor region which has a second conductivity type. The third semiconductor region is adjacent to the second semiconductor region which has the second conductivity type. The gate is proximate to but insulated from the second semiconductor region and electrically coupled to the third semiconductor region. When the first semiconductor region is biased in a first direction, an inversion region forms in the second semiconductor region. The inversion region forms a forward-biased tunnel diode junction with the third semiconductor region. When the first semiconductor region is biased a second direction, the semiconductor rectifier device functions as a reverse-biased PIN diode.

Power rectifiers and method of making same

A high-efficiency power semiconductor rectifier device () comprising a &#x3b4;P++ layer (), a P-body (), an N-drift region (), an N+ substrate (), an anode (), and a cathode (). The method of fabricating the device () comprises the steps of depositing the N-drift region () on the N+ substrate (), implanting boron into the N-drift region () to create a P-body region (), forming a layer of titanium silicide () on the P-body region (), and concentrating a portion of the implanted boron at the interface region between the layer of titanium silicide () and the P-body region () to create the &#x3b4;P++ layer () of supersaturated P-doped silicon.

High efficiency rectifier

Growing community of inventors

Lee's Summit, MO, United States of America

Timothy S Eastman