Speedfam-ipec Corporation

Applied Materials, Inc.

Accord S. E. G.

Accord Semiconductor Equipment Group

Timothy S Dyer

Dan Maydan

Brian C Lue

Robert J Steger

Arik Donde

Edwin Charles Weldon

Kenneth S Collins

Ananda H Kumar

Shamouil Shamouilian

Arnold Kholodenko

Kadthala Ramaya Narendrnath

Dennis Stanley Grimard

Alexander M Veytser

Semyon L Kats

Clinton O Fruitman

Saket Chadda

Fred Conrad Redeker

Shijian Li

Derek R Witty

Romuald Nowak

Turgut Sahin

Stephen C Schultz

John Derwood Herb

John F Stumpf

Wayne Lougher

An apparatus for planarizing a workpiece has a web with a face which is positioned adjacent the workpiece during planarization. At least one tension assembly is configured to maintain tension of the web. An orbiting assembly is configured to orbit the web relative to the workpiece. The apparatus for planarizing a workpiece may include first and second polishing surfaces where the first polishing surface has a substantially horizontal web with a face which is positioned adjacent the workpiece during the planarization process. The apparatus may also have a rotatable carousel and at least two workpiece carriers suspended from the carousel. Each of the carriers is configured to carry a workpiece and press the workpiece against one of the polishing surfaces while causing relative motion between the workpiece and the polishing surface. An apparatus for planarizing a workpiece which includes a plurality of polishing stations is also disclosed. At least one of the polishing stations has a web with a first face which is positioned adjacent the workpiece during planarization . The apparatus also includes an orbiting assembly configured to orbit the web relative to the workpiece.

Orbiting indexable belt polishing station for chemical mechanical polishing

An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.

Electrostatic chuck having composite dielectric layer and method of manufacture

The invention is a slurry distribution system for controlling the distribution of slurry across a top surface of a polishing pad. The polishing pad may be supported by a platen and be part of a polishing station in a chemical mechanical polishing tool. Two juxtaposed perforated manifolds below the polishing pads are used as the primary means of controlling the distribution of slurry. A motor is used to rotate at least one of the perforated manifolds until a desired pattern of aligned perforations below the polishing pad has been achieved. By initially creating the perforations in each manifold in a particular pattern, many different patterns of aligned perforations may be obtained. Patterns may advantageously be made possible that have concentrations of aligned perforations in the center, middle and/or periphery of the manifolds. The polishing pad will have a slurry distribution corresponding to the concentration of aligned perforations in the manifolds.

Dynamic slurry distribution control for CMP

A work piece carrier head for a CMP or other polishing apparatus is configured to eliminate the slow band associated with the polishing of the surface of a work piece. The carrier head includes a wear ring that is positioned circumferentially about the work piece and that together with the work piece is pressed against a moving polishing pad. The wear ring is resiliently coupled to the body of the carrier head in a manner to avoid any overturning moment on the ring caused by the frictional force of the polishing pad against the wear ring.

Carrier head with reduced moment wear ring

The invention is embodied in a method of cleaning a plasma reactor by creating a vacuum in the chamber while introducing an etchant gas into the chamber through the gas injection ports, and applying RF energy to a ceiling electrode in the chamber while not necessarily applying RF energy to the coil antenna, so as to strike a predominantly capacitively coupled plasma in the vacuum chamber. In another embodiment the method includes, whenever the reactor is to be operated in an inductive coupling mode, applying RF power to the reactors coil antenna while grounding the ceiling electrode, and whenever the reactor is to be operated in a capacitive coupling mode, applying RF power to the ceiling electrode, and whenever the reactor is to be cleaned, cleaning the reactor by applying RF power to the ceiling electrode and to the coil antenna while introducing an etchant gas into the vacuum chamber. In yet another embodiment the method includes performing chemical vapor deposition on a wafer by introducing a deposition precursor gas into the chamber while maintaining an inductively coupled plasma therein by applying RF power to the coil antenna while grounding the ceiling electrode, and cleaning the reactor by introducing a precursor cleaning gas into the chamber while maintaining a capacitively coupled plasma in the chamber by applying RF power to the ceiling electrode.

Method of operating high density plasma CVD reactor with combined inductive and capacitive coupling

The invention is a chemical-mechanical polishing wafer carrier that is able to apply a plurality of different pressures, with minimal discontinuities at the interfaces between different pressures, through a diaphragm to a back surface of a wafer. A plurality of concentric balloons, that may be individually pressurized, is used to support and press on the back surface of the diaphragm. The walls of the balloons are preferably thin and elastic and preferably do not attach to the diaphragm. This helps to minimize any pressure discontinuities on the diaphragm along the interfaces between the balloons. A wafer may be placed against the front surface of the diaphragm allowing the front surface of the diaphragm to retain and press against the back surface of the wafer during a planarization process.

Carriers with concentric balloons supporting a diaphragm

An electrostatic chuck useful for holding a substrate in a high density plasma, comprises an electrode at least partially covered by a semiconducting dielectric , wherein the semiconducting dielectric may have an electrical resistance of from about 5&times;10 &OHgr;cm to about 8&times;10 &OHgr;cm.

Dielectric covered electrostatic chuck

The present invention is a method and apparatus for conditioning a polishing pad used for chemically mechanically polishing semiconductor wafers. The conditioning device includes a rigid elongated element that resists bowing or warping during the conditioning process. Abrasive elements are supported by a substantially planar bottom surface of the rigid element. The abrasive elements may have a diamond layer cut into a grid pattern to provide an abrasive surface. The conditioning device is preferably used to condition a polishing pad supported by a rigid platen. The conditioning device is pressed against and swept across the polishing pad by an actuator while the polishing pad is rotated to uniformly condition the polishing pad. This uniform conditioning, while avoiding the bowing and warping of the prior art, provides a superior conditioning process for the polishing pad.

Rigid polishing pad conditioner for chemical mechanical polishing tool

A method and apparatus is presented for planarizing or polishing workpiece surfaces using an ion beam in the presence of a radio frequency generated plasma. A workpiece is placed in a holder within a vacuum chamber equipped with a radio frequency inductive plasma generator. The workpiece surface is exposed to a source of energetic ions, the chamber is filled with gas, and the gas is ionized with radio frequency energy to form inductive plasma that surrounds the workpiece. An ion beam mounted above the workpiece scans the workpiece surface with sufficient energy to remove micro irregularities from the workpiece surface.

Ion milling planarization of semiconductor workpieces

CVD reactors can be cleaned at surprisingly high rates using Non-Green House gases by employing the Non-Green House gases at high temperatures and with relatively high fluorine free radical concentrations so long as high concentrations of oxygen are also used to compensate for the detrimental effects of the high temperatures and free fluorine radical concentrations. Net oxide residue etch rates approximately 2,800 times greater than etch rates achieved with controlled Green House gases can be achieved. This is done by employing a pre-ionization module upstream of the reactor to be cleaned to generate the requisite high density plasma.

Apparatus and method for removing silicon dioxide residues from CVD reactors

Components of chemical, mechanical, polishing apparatus with components resistant to chemical attack by chemical slurries used in the polishing of semiconductor wafers. Among the components that are improved to enhance resistance to chemical attack are the polishing platen, pad conditioning end effectors, various subassemblies, housings for instrumentation, carrier rinse station surfaces, and other components that come into contact with a slurry. The coating compositions are preferably tightly adherent to the underlying substrate, and may be applied by a wide range of techniques. Especially useful are coatings such as tungsten carbide, tungsten nitride, amorphous diamond like carbon, and other such inert wear resistant coatings.

Chemical mechanical polishing tool components with improved corrosion resistance

An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises a dielectric covered electrode 110 having at least one heat transfer gas flow conduit 150 therein. An electrical isolator 200 comprising dielectric material is positioned in the gas flow conduit 150 to (i) electrically isolate the gas in the conduit from the plasma or electrode 110, and (ii) allow passage of heat transfer gas through the conduit. Preferably, the dielectric material comprises a plasma-deactivating material that has a high surface area that reduces plasma formation of gas passing through the conduit 150 in a plasma process. A semiconducting dielectric member 115 useful for rapidly charging and discharging electrostatic chucks is also described.

Electrostatic chuck having improved gas conduits

The present invention discloses a two basic structures (including multiple variations within one of the basic structures) and methods for fabrication of the structures which facilitate the flow of cooling gas or other heat transfer fluid to the surface of an electrostatic chuck. The basic structures address both the problem of breakdown of a heat transfer gas in an RF plasma environment and the problem of arcing between a semiconductor substrate and the conductive pedestal portion of the electrostatic chuck in such an RF plasma environment.

Conduits for flow of heat transfer fluid to the surface of an

Premature equipment failure of susceptors used during plasma processing of semiconductor wafers is avoided by making the holes, characteristic of susceptors, such that the hole diameter is less that the susceptor thickness. In one embodiment, the susceptor includes a pattern of support struts which permits the planar top plate of the susceptor to be made quite thin and yet permits the diameter-to-thickness requirement to be met by aligning the pattern of holes with the pattern of support struts and having the holes penetrate the struts.

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Tempe, AZ, United States of America

Timothy S Dyer