Element Six Gmbh

Element Six Technologies Limited

Baker Hughes Corporation

Baker Hughes, a Ge Compnay, LLC

Other

Element Six Abrasives S.a.

Baker Hughes Holdings LLC

Timothy Peter Mollart

John Robert Brandon

Danny Eugene Scott

Joseph Michael Dodson

Geoffrey Alan Scarsbrook

Mark Edward Newton

Paul Nicholas Inglis

Laura Anne Hutton

Julie Victoria Macpherson

Christopher John Howard Wort

Patrick Robert Unwin

Charles Simon James Pickles

Carlton Nigel Dodge

Steven Edward Coe

Alexander Lamb Cullen

Paul Nicolas Inglis

Wang Nang Wang

John James Barry

Roger William Nigel Nilen

Andrew Michael Bennett

Jonathan James Wilman

Julie Victoria MacPherson

Christopher Rhys Bowen

Michael John Edwards

Julian James Sargood Ellis

Patrick Simon Bray

Quanzhong Jiang

Ben Llewelyn Green

Eleni Bitziou

Maxim Bruckshaw Joseph

Nicola Louise Palmer

Roy Edward Patrick Meyler

Duncan Allsopp

Zoe Ayers

Stefan Ian Olsson Robbie

Christopher John Wort

Charles Simon Pickles

Zoe Ayres

A method of fabricating a plurality of single crystal CVD diamonds. The method includes mounting a plurality of single crystal diamond substrates on a first carrier substrate. The plurality of single crystal diamond substrates is subjected to a first CVD diamond growth process to form a plurality of single crystal CVD diamonds on the plurality of single crystal diamond substrates. The plurality of single crystal CVD diamonds are mounted in a recessed carrier substrate and subjected to a second CVD diamond growth process.

Synthesis of thick single crystal diamond material via chemical vapour deposition

An electrochemical cell for treating a fluid, the electrochemical cell comprising: at least two opposing electrodes defining a flow path for the fluid between the electrodes, where at least one of the electrodes is formed of electrically conductive diamond material; drive circuitry configured to apply a potential across the electrodes such that a current flows between the electrodes when the fluid is flowed through the flow path between the electrodes; and a housing in which the electrodes are disposed, the housing comprising pressure seals configured to containing the fluid within the fluid path and a support structure for supporting the electrodes, wherein the support structure and the pressure seals are configured such that the electrochemical cell has an operating pressure in a range 2 to 10 bar within which the electrodes are supported without fracturing and within which the fluid is contained within the flow path, wherein the electrodes are spaced apart by a distance in a range 0.5 mm to 4 mm, and wherein the drive circuitry is configured to apply a potential across the electrodes giving a current density &#x2265;15,000 Amp/mover an electrode area of at least 20 cmfor an operating voltage of no more than 20 V.

Electrochemical cell comprising electrically conductive diamond electrodes

An electrochemical sensor comprising: a boron doped diamond electrode formed of boron doped diamond material; an array of non-diamond carbon sites disposed on a sensing surface of the boron doped diamond electrode; electrochemically active surface groups bonded to the non-diamond carbon sites for generating a redox peak associated with a target species which reacts with the electrochemically active surface groups bonded to the non-diamond carbon sites when a solution containing the target species is disposed in contact with the sensing surface in use; an electrical controller configured to scan the boron doped diamond electrode over a potential range to generate said redox peak; and a processor configured to give an electrochemical reading based on one or both of a position and an intensity of said redox peak.

Boron doped diamond based electrochemical sensor heads

An earth-boring drilling tool comprises a cutting element. The cutting element comprises a substrate, a diamond table, and at least one sensing element formed from a doped diamond material disposed at least partially within the diamond table. A method for determining an at-bit measurement for an earth-boring drill bit comprises receiving an electrical signal generated within a doped diamond material disposed within a diamond table of a cutting element of the earth-boring drill bit, and correlating the electrical signal with at least one parameter during a drilling operation.

Apparatuses and methods for obtaining at-bit measurements for an earth-boring drilling tool

A method of forming an instrumented cutting element comprises forming a free-standing sintered diamond table having at least one chamber in the free-standing sintered diamond table, providing a doped diamond material within the at least one chamber, and attaching a substrate to the free-standing sintered diamond table to form an instrumented cutting element. The instrumented cutting element includes the doped diamond material disposed within the sintered diamond table on the substrate. A method of forming an earth-boring tool comprises attaching at least one instrumented cutting element to a body of an earth-boring tool. The at least one instrumented cutting element has a diamond table bonded to a substrate. The diamond table has at least one sensing element disposed at least partially within the diamond table. The at least one sensing element comprises a doped diamond material.

Methods for forming instrumented cutting elements of an earth-boring drilling tool

A polycrystalline chemical vapor deposited (CVD) diamond wafer comprising:

Large area optical quality synthetic polycrystalline diamond window

A boron doped synthetic diamond material which has the following characteristics: a solvent window meeting one or both of the following criteria as measured by sweeping a potential of the boron doped synthetic diamond material with respect to a saturated calomel reference electrode in a solution containing only deionized water and 0.1M KNOas a supporting electrolyte at pH 6: the solvent window extends over a potential range of at least 4.1 V wherein end points of the potential range for the solvent window are defined when anodic and cathodic current density measured at the boron doped synthetic diamond material reaches 38 mA cm; and the solvent window extends over a potential range of at least 3.3 V wherein end points of the potential range for the solvent window are defined when anodic and cathodic current density measured at the boron doped synthetic diamond material reaches 0.4 mA cm; a peak-to-peak separation &#x394;Ep (for a macroelectrode) or a quartile potential &#x394;E(for a microelectrode) of no more than 70 mV as measured by sweeping a potential of the boron doped synthetic diamond material at a rate of 100 mV swith respect to a saturated calomel reference electrode in a solution containing only deionized water, 0.1M KNO3 supporting electrolyte, and 1 mM of FcTMAor Ru(NH)6at pH 6; and a capacitance of no more than 10 &#x3bc;F cmas measured by sweeping a potential of the boron doped synthetic diamond material with respect to a saturated calomel reference electrode between 70 mV and &#x2212;70 mV in a solution containing only deionized water and 0.1M KNOsupporting electrolyte at pH 6, measuring resultant current, subtracting a current value at 0 V when sweeping towards negative potentials from a current value at 0 V when sweeping towards positive potentials, dividing the subtracted current value by 2, and then dividing the result by an area (cm) of the boron doped synthetic diamond material and by a rate at which the potential is swept (Vs) to give a value for capacitance in F cm.

Synthetic diamond materials for electrochemical sensing applications

A method of fabricating a composite semiconductor component comprising: (i) providing a bowed substrate comprising a wafer of synthetic diamond material having a thickness t, the bowed substrate being bowed by an amount B and comprising a convex face and a concave face; (ii) growing a layer of compound semiconductor material on the convex face of the bowed substrate via a chemical vapour deposition technique at a growth temperature T to form a bowed composite semiconductor component comprising the layer of compound semiconductor material of thickness ton the convex face of the bowed substrate, the compound semiconductor material having a higher average thermal expansion coefficient than the synthetic diamond material between the growth temperature T and room temperature providing a thermal expansion mismatch &#x394;T; and (iii) cooling the bowed composite semiconductor component, wherein the layer of compound semiconductor material contracts more than the wafer of synthetic diamond material during cooling due to the thermal expansion mismatch &#x394;T, wherein B, t, t, and &#x394;Tare selected such that the layer of compound semiconductor material contracts on cooling by an amount which off-sets bowing in the bowed substrate thus pulling the bowed composite semiconductor component into a flat configuration, the layer of compound semiconductor material having a tensile stress after cooling of less than 500 MPa.

Substrates for semiconductor devices

A polycrystalline chemical vapor deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 125 mm; a thickness equal to or greater than 200 &#x3bc;m; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centered on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient &#x2266;0.2 cmat 10.6 &#x3bc;m; and a dielectric loss coefficient at 145 GHz, of tan &#x3b4;&#x2266;2&#xd7;10.

The present disclosure relates to substrates for use in microwave plasma reactors. Certain substrates include a cylindrical disc of a carbide forming refractory metal having a flat growth surface on which CVD diamond is to be grown and a flat supporting surface opposed to said growth surface. The cylindrical disc may have a diameter of 80 mm or more. The growth surface may have a flatness variation no more than 100 mm The supporting surface may have a flatness variation no more than 100 mm.

Microwave plasma reactors and substrates for synthetic diamond manufacture

A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 70 mm; a thickness equal to or greater than 1.3 mm; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient &#x2266;0.2 cmat 10.6 &#x3bc;m; and a dielectric loss coefficient at 145 GHz, of tan &#x3b4;&#x2266;2&#xd7;10.

Apparatuses for obtaining at-bit measurements for an earth-boring drilling tool

A method of fabricating a synthetic diamond coated compound semiconductor substrate, the method comprising: loading a composite substrate into a chemical vapor deposition (CVD) reactor, the composite substrate comprising a single crystal carrier wafer, a layer of single crystal compound semiconductor epitaxially grown on the carrier wafer, and an interface layer disposed on the layer of compound semiconductor, the interface layer forming a growth surface suitable for growth of synthetic diamond material thereon via a CVD technique; and growing a layer of CVD diamond material on the growth surface of the interface layer, wherein during growth of CVD diamond material a temperature difference at the growth surface between an edge and a center point thereof is maintained to be no more than 80&#xb0; C., and wherein the carrier wafer has an aspect ratio, defined by a ratio of thickness to width, of no less than 0.25/100.

Synthetic diamond coated compound semiconductor substrates

Growing community of inventors

Oxfordshire, United Kingdom

Timothy Peter Mollart