Other

University of Texas System

The United States of America As Represented by the Administrator of the

Texas Heart Institute

Timothy N Krabach

Gregory H Bearman

James T Willerson

S Ward Casscells

Michael L Eastwood

Eric R Fossum

Thomas J Cunningham

Craig O Staller

A method of detecting vulnerable arterial plaque formed on the vessel wall in vivo is disclosed. The method comprises obtaining an image of the arterial plaque, measuring the temperature of the arterial plaque, and determining whether the plaque exhibits an elevated temperature compared to the temperature of at least one adjacent vessel wall site. The method may include determining whether the plaque exhibits an elevated temperature of between 0.4 to 4&#xb0; C. above at least one adjacent vessel wall site.

Method of detecting vulnerable atherosclerotic plaque

An infrared, heat-sensing catheter particularly useful for identifying potentially fatal arterial plaques in patients with disease of the coronary or other arteries and its use are detailed. In one embodiment, an infrared fiberoptic system (with or without ultrasound) is employed at the tip of the catheter to locate inflamed, heat-producing, atherosclerotic plaque, which is at greater risk for rupture, fissure, or ulceration, and consequent thrombosis and occlusion of the artery. In another embodiment, a catheter with an infrared detector (with or without ultrasound) employed at its tip will likewise locate inflamed heat-producing atherosclerotic plaque. The devices and methods of the invention may be used to detect abscesses, infection, and cancerous regions by the heat such regions differentially display over the ambient temperature of immediately adjacent tissues. The methods and devices of the invention may also be used to detect regions of cooler than ambient tissue in a vessel or organ which indicate cell death, thrombosis, cell death, hemorrhage, calcium or cholesterol accumulations, or foreign materials.

Detecting thermal discrepancies in vessel walls

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

Monolithic in-based III-V compound semiconductor focal plane array cell

Growing community of inventors

Valencia, CA, United States of America

Timothy N Krabach