International Business Machines Corporation

Timothy M Hughes

Ratnam Sooriyakumaran

Robert David Allen

Pushkara Rao Varanasi

Phillip Joe Brock

David Robert Medeiros

Mahmoud M Khojasteh

Ranee W Kwong

William R Brunsvold

Margaret C Lawson

Qinghuang Lin

Wayne Martin Moreau

Niranjan Mohanlal Patel

Ahmad D Katnani

George M Jordhamo

Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.

Underlayer compositions for multilayer lithographic processes

A radiation sensitive resist composition exhibiting high resolution and enhanced etch resistance comprising a silicon containing polymeric additive, a non-silicon containing base polymer, a photoacid generator and a base is provided. A method of forming a patterned resist film is also provided. A resist film having an upper surface region enriched with silicon is also disclosed.

Resist composition and process of forming a patterned resist layer on a substrate

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Marlboro, NY, United States of America

Timothy M Hughes