Intel Corporation

Timothy L Deeter

Thomas N Marieb

Daniel Pantuso

Shi-Ning Yang

Melton C Bost

Robert A Gasser

Sarangapani Sista

Daniel Murray

Vivek K De

Tanay Karnik

Ali Keshavarzi

Juanita N Kurtin

Seiichi Morimoto

Janice C Lee

In one embodiment of the invention, a fuse element for a one time programmable memory may include carbon nanotubes coupled to a first transistor node and to a second transistor node. The carbon nanotubes may have a first resistance which may be changed upon programming the memory cell with low current levels.

Carbon nanotube fuse element

A thermally coupling electrically decoupling cooling device is described. The cooling device may be thermally disposed between a self-heating electrically conductive line and a semiconductor substrate to cool the line by transferring heat from the line to the substrate while blocking flow of current from the line to the substrate. The cooling device may contain a thermally conductive structure, such as a stack of vias and lines, to conduct heat away from the electrically conductive line, and a current blocking structure, such as a reverse biased diode or a capacitor, to block current flow into the substrate. Specific current blocking structures include a reverse biased diode containing an n-doped region and a p-doped region disposed between the thermally conductive structure and the substrate, and a capacitor containing a dielectric layer disposed between the thermally conductive structure and the semiconductor substrate.

Thermally coupling electrically decoupling cooling device for integrated circuits

A method for optimally sizing dummy structures in an integrated circuit design is disclosed. Adjacent dummy structures are merged to provide a composite merged dummy structure. Each side of a first dummy structure representation is expanded in a lateral direction by a predetermined distance such that the first dummy structure representation merges with an adjacent second dummy structure representation forming the composite merged dummy structure. The composite merged dummy structure is then examined to determine if it exceeds a predetermined size. If the composite merged dummy structure exceeds the predetermined size, then the composite merged dummy structure is contracted to fit within predetermined perimeters.

Merging dummy structure representations for improved distribution of

A method of forming a guard wall for a semiconductor die is described. A dielectric layer is deposited over a semiconductor substrate. The dielectric layer is patterned to form a guard wall opening extending through the dielectric layer. The guard wall opening lies adjacent to an electrically active region of the die. The guard wall opening has a pattern without any straight line segments greater than about 10 .mu.m long. A first layer is deposited over the substrate and etched to form a first layer sidewall spacer along a side of the guard wall opening. A second layer is deposited within the guard wall opening to form the guard wall.

Guard wall to reduce delamination effects within a semiconductor die

Method of forming a guard wall to reduce delamination effects

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Portland, OR, United States of America

Timothy L Deeter