Applied Materials, Inc.

Intermolecular, Inc.

Lam Research Corporation

Solyndra, LLC

Timothy Joseph Franklin

Carlaton Wong

Adam J Fischbach

Philip Allan Kraus

Xue Chang

Pramit Manna

Dan A Marohl

Edward L Haywood

Stephen Charles Garner

Eswaranand Venkatasubramanian

Anwar Husain

Alexander Sulyman

Abhijit Basu Mallick

Steven E Babayan

Samuel E Gottheim

Daniel Sang Byun

Joseph Frederick Sommers

Rajinder Dhindsa

Avi Tepman

Tsutomu Tanaka

Canfeng Lai

Khokan Chandra Paul

Sumit Agarwal

David Datong Huo

Ravikumar Patil

Reyn Wakabayashi

Vijet Patil

Rohan Vijay Rane

Srinivas Gandikota

Charles T Carlson

Kallol Bera

James Rogers

Ratson Morad

Thai Cheng Chua

Jason M Schaller

Tza-Jing Gung

David J Coumou

Robert Brent Vopat

Zheng John Ye

David T Blahnik

Swaminathan T Srinivasan

Donald J Olgado

Donald J K Olgado

Bhaskar Kumar

Jason Stephen Corneille

Kien Nai Chuc

James Tsung

Joseph Frederick Behnke

Aaron Webb

Jeffrey Charles Blahnik

Kaushik Comandoor Alayavalli

Robert D Tas

Julia S Svirchevski

Younes Achkire

Akshay Dhanakshirur

Sathya Swaroop Ganta

Steven Douglas Flanders

Owen Fong

Nancy E Gilbert

Jason R Wright

Joe Laia

Nathan D Stein

Stephen C Jones

Exemplary semiconductor substrate supports may include a pedestal shaft. The semiconductor substrate supports may include a platen. The platen may define a fluid channel across a first surface of the platen. The semiconductor substrate supports may include a platen insulator positioned between the platen and the pedestal shaft. The semiconductor substrate supports may include a conductive puck coupled with the first surface of the platen and configured to contact a substrate supported on the semiconductor substrate support. The semiconductor substrate supports may include a conductive shield extending along a backside of the platen insulator and coupled between a portion of the platen insulator and the pedestal shaft.

Semiconductor processing chambers and methods for deposition and etch

Embodiments of showerheads are provided herein. In some embodiments, a showerhead assembly includes a chill plate having a plurality of recursive gas paths and one or more cooling channels disposed therein, wherein each of the plurality of recursive gas paths is fluidly coupled to a single gas inlet extending to a first side of the chill plate and a plurality of gas outlets extending to a second side of the chill plate; and a heater plate coupled to the chill plate, wherein the heater plate includes a plurality of first gas distribution holes extending from a top surface thereof to a plurality of plenums disposed within the heater plate, the plurality of first gas distribution holes corresponding with the plurality of gas outlets of the chill plate, and a plurality of second gas distribution holes extending from the plurality of plenums to a lower surface of the heater plate.

Showerhead assembly with recursive gas channels

An apparatus for processing substrates that includes a process chamber with a process volume and a conductance liner surrounding the process volume wherein the conductance liner has at least one fixed portion and a movable portion. The movable portion is configured to expose a substrate transfer slot in a wall of the process chamber. The apparatus also includes a lifting assembly with an actuator attached to the movable portion of the conductance liner. The lifting assembly is configured to move the movable portion of the conductance liner in a vertical direction to expose the substrate transfer slot.

Methods and apparatus for conductance liners in semiconductor process chambers

Porous plugs for gas delivery in substrate supports and substrate supports and substrate processing chambers incorporating same are provided herein. In some embodiments, a porous plug for use in a substrate support includes: a porous central passageway; and a solid outer shell bonded to and surrounding the porous central passageway such that there is no continuous gap between the porous central passageway and the solid outer shell along an entire length of the porous plug, wherein the solid outer shell includes sealing surfaces disposed on ends of the solid outer shell to facilitate forming a seal along the sealing surface and surrounding the porous central passageway. In some embodiments, one or more o-ring retaining grooves can be formed about the outer surface of the solid outer shell.

Porous plug for electrostatic chuck gas delivery

Baffle for anti-rotation process kit for substrate processing chamber

A method for cleaning one or more interior surfaces of a processing chamber includes removing a processed substrate from the processing chamber, and introducing a first cleaning chemistry into the processing chamber to generate a first internal pressure of greater than 1.1 atm within the processing chamber and remove deposited contaminants from the one or more interior surfaces of the processing chamber. The method further comprises removing the cleaning chemistry from the processing chamber.

Conditioning of a processing chamber

Methods and apparatus for a lift pin mechanism for substrate processing chambers are provided herein. In some embodiments, the lift pin mechanism includes a lift pin comprising a shaft with a top end, a bottom end, and a coupling end at the bottom end; a bellows assembly disposed about the shaft. The bellows assembly includes an upper bellows flange having an opening for axial movement of the shaft; a bellows having a first end coupled to a lower surface of the upper bellows flange such that the shaft extends into a central volume surrounded by the bellows; and a bellows guide assembly coupled to a second end of the bellows to seal the central volume. The shaft is coupled to the bellows guide assembly at the coupling end. The bellows guide assembly is axially movable to move the lift pin with respect to the upper bellows flange.

Lift pin mechanism

A method includes depositing a first layer of a first material onto a surface of a chamber component of a processing chamber. The first material comprises a polymer, the polymer having a dielectric strength of at least 40 MV/m. The method further includes depositing a second layer of a second material onto the first layer. The second material comprises a first ceramic material impregnated into the first polymer or a second polymer. The method further includes depositing a third layer. The third layer is of a third material. The third material includes the first ceramic material or a second ceramic material. The third material does not adhere to the first polymer or the second polymer. The third material does adhere to the first ceramic material or the second ceramic material of the second layer.

Plasma resistant arc preventative coatings for manufacturing equipment components

Ring for an anti-rotation process kit for a substrate processing chamber

A component for use in a substrate process chamber includes: a body having an opening extending partially through the body from a top surface of the body, wherein the opening includes a threaded portion for fastening the body to a second process chamber component, wherein the threaded portion includes a plurality of threads defining a plurality of rounded crests and a plurality of rounded roots, and wherein a depth of the threaded portion, being a radial distance between a rounded crest of the plurality of rounded crests and an adjacent root of the plurality of rounded roots, decreases from a first depth to a second depth at a last thread of the plurality of threads.

Thread profiles for semiconductor process chamber components

Embodiments of a method of forming one or more holes in a substrate for use as a process chamber component are provided herein. In some embodiments, a method of forming one or more holes in a substrate for use as a process chamber component include forming the one or more holes in the substrate with one or more laser drills using at least one of a percussion drilling, a trepanning, or an ablation process, wherein each of the one or more holes have an aspect ratio of about 1:1 to about 50:1, and wherein the substrate is a component for gas delivery or fluid delivery.

Methods to fabricate chamber component holes using laser drilling

Methods and apparatus for lift pin assemblies for substrate processing chambers are provided. In some embodiments, a lift pin assembly includes a lift pin comprising a shaft, a head, and a coupling end, the head configured to rest against an electrostatic chuck; an upper guide comprising a top end, a bottom end, and a first opening extending from the top end to the bottom end, wherein the shaft is disposed and axially movable through the first opening; a lower guide comprising a top end, a bottom end, and a second opening and a third opening extending from the top end to the bottom end, wherein the third opening is larger than the second opening, and wherein the shaft is disposed and axially movable through the second opening and the third opening; and a biasing mechanism coupled to the shaft and configured to bias the lift pin against the electrostatic chuck.

Lift pin assembly

Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film on a substrate and/or facilitate chamber cleaning after processing. In one embodiment, a system is disclosed that includes a rotational magnetic housing disposed about an exterior sidewall of a chamber. The rotational magnetic housing includes a plurality of magnets coupled to a sleeve that are configured to travel in a circular path when the rotational magnetic housing is rotated around the chamber, and a plurality of shunt doors movably disposed between the chamber and the sleeve, wherein each of the shunt doors are configured to move relative to the magnets.

Shunt door for magnets in plasma process chamber

Semiconductor processing chambers for deposition and etch

Growing community of inventors

Campbell, CA, United States of America

Timothy Joseph Franklin