University of Florida Research Foundation, Incorporated

Timothy J Anderson

Olga Kryliouk

Lisa McElwee-White

Hyun Jong Park

Michael Anthony Mastro

Carlos Gilberto Ortiz

Omar J Bchir

Christopher O'Donohue

Steven W Johnston

K Randall McClain

Embodiments of the invention are directed to a method of preparing a WN, WNC, WNO, and WNCOsolid by the deposition of a WNprecursor at a temperature below 300&#xb0; C. The WNprecursor is a tungsten nitrido complex. The deposition can be carried out using a tungsten nitrido complex as a single-source metal organic precursor. In an embodiment of the invention, the deposition can be performed to form a plurality of WN, WNC, WNO, WNCOnanoparticles.

Tungsten nitrido precursors for the CVD of tungsten nitride, carbonitride, and oxide films

A layered group III-nitride article includes a single crystal silicon substrate, and a highly textured group III-nitride layer, such as GaN, disposed on the silicon substrate. The highly textured group III-nitride layer is crack free and has a thickness of at least 10 &#x3bc;m. A method for forming highly textured group III-nitride layers includes the steps of providing a single crystal silicon comprising substrate, depositing a nanostructured InGaN (1&#x2267;x&#x2267;0) interlayer on the silicon substrate, and depositing a highly textured group III-nitride layer on the interlayer. The interlayer has a nano indentation hardness that is less than both the silicon substrate and the highly textured group III-nitride layer.

Group III-nitrides on Si substrates using a nanostructured interlayer

Group III-nitrides on SI substrates using a nanostructured interlayer

Disclosed herein is an article comprising a substrate; an interlayer comprising aluminum nitride, gallium nitride, boron nitride, indium nitride or a solid solution of aluminum nitride, gallium nitride, boron nitride and/or indium nitride; the interlayer being directly disposed upon the substrate and in contact with the substrate; where the interlayer comprises a columnar film and/or nanorods and/or nanotubes; and a group-III nitride layer disposed upon the interlayer; where the group-III nitride layer completely covers a surface of the interlayer that is opposed to a surface in contact with the substrate; the group-III nitride layer being free from cracks.

Crack free multilayered devices, methods of manufacture thereof and articles comprising the same

A layered article and method for forming the same includes a single crystal silicon substrate, a silicon oxynitride layer (SixNyOz) disposed on the silicon substrate, and a single crystal GaN layer disposed on the oxynitride layer. The silicon oxynitride layer can be formed by nitridation of a native oxide layer. One or more integrated electronic circuits and/or integrated optical or optoelectronic devices can be built on the article.

Group III-nitride growth on Si substrate using oxynitride interlayer

Single imido tungsten imido precursors are described for the deposition of tungsten nitride on a substrate by processes such as metal organic chemical vapor deposition. The precursors may be employed to form diffusion barrier layers on microelectronic devices. A method for forming tungsten nitride layers includes the steps of providing a tungsten imido species having the formula L W(NR)X , where R is a carbon containing group, y is an integer between 0 and 5, n is an integer between 0 and 4 and L and X are selected from the group of non-imido ligands. The single imido tungsten imido species is flowed to a surface of a substrate where the single imido tungsten imido species decomposes to form a tungsten nitride layer.

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Gainesville, FL, United States of America

Timothy J Anderson