Shipley Company LLC

Rohm & Haas Electronic Materials LLC

E Ink Corporation

Polaroid-corporation-patent Department

Timothy G Adams

Roger F Sinta

Edward K Pavelchek

Manuel doCanto

James Michael Mori

Michael K Gallagher

Suzanne M Coley

Jeffrey M Calvert

Dana A Gronbeck

Peter Trefonas, Iii

James W Thackeray

George G Barclay

Daniel Y Pai

Rosemary Bell

Thomas M Zydowsky

Robert F Blacksmith

Robin L Miller-Fahey

James F Cameron

Gregory P Prokopowicz

Zhibiao Mao

Martha M Rajaratnam

Matthew A King

Michael F Cronin

Jose Hernandez

Manual doCanto

An electro-optic display includes a first light-transmissive electrode, a layer of an electro-optic medium capable of being switched between an open state and a closed state upon application of an electric field, a second light-transmissive electrode, and a layer having a plurality of retro-reflectors.

Retroreflective electro-optic displays

A method of forming air gaps within a solid structure is provided. In this method, a sacrificial material is covered by an overlayer. The sacrificial material is then removed through the overlayer to leave an air gap. Such air gaps are particularly useful as insulation between metal lines in an electronic device such as an electrical interconnect structure. Structures containing air gaps are also provided.

Electronic devices having air gaps

The present invention provides new photoresist compositions that comprise a resin binder, a photoactive component, particularly an acid generator, and a dye material that contains one or more chromophores that can reduce undesired reflections of exposure radiation. Preferred dye compounds are polymeric materials that include one or more chromophores such as anthracene and other polycyclic moieties that effectively absorb deep UV exposure radiation.

Dyed photoresists and methods and articles of manufacture comprising same

Air gap formation

The present invention provides new light absorbing compositions suitable for use as an antireflective coating ('ARC') with an overcoated resist layer. ARCs of the invention exhibit increased etch rates in standard plasma etchants. Preferred ARCs of invention have significantly increased oxygen content relative to prior compositions.

Antireflective coatings with increased etch rates

Methods for depositing uniform, pinhole-defect free organic polysilica coatings are provided. These methods allow for the use of these materials as spin-on cap layers in the manufacture of integrated circuits.

Electronic device manufacture

The invention provides novel polymers and photoresist compositions that comprise the polymers as a resin component. Polymers of the invention contain two distinct groups which can undergo a deblocking reaction in the presence of photogenerated acid, wherein one of the deblocking moieties is an acetal group. The second photoacid-labile group is suitably an ester, particularly as provided by polymerization of an alkyl acrylate group, such as t-butylmethacrylate.

Polymers with mixed photoacid-labile groups and photoresists comprising same

The present invention provides new light absorbing compositions suitable for use as antireflective coating compositions ('ARCs'), including for deep UV applications. The antireflective compositions of the invention are particularly useful where a planarizing coating layer is required. ARCs of the invention contain a low molecular weight resin, a plasticizer compound and/or a low Tg resin. The invention also includes methods for applying forming planarizing ARC coating layers.

Planarizing antireflective coating compositions

Compositions and methods of the invention provide for a controlled flow of resist into device contact (via) holes during a post-exposure, post-development hard-bake step. Resists of the invention are positive-acting and contain one or more components that are preferably substantially stable (i.e. no substantial crosslinking) during: 1) soft-bake, pre-exposure thermal treatment to remove solvent carrier of the applied resist, and 2) post-exposure, pre-development thermal treatment to promote or enhance the acid-promoted reaction in exposed regions (typically a de-blocking reaction). However, resists of the invention will crosslink during a post-development more stringent thermal treatment (thermal flow hard-bake step).

Photoresist compositions and use of same

The present invention provides new light absorbing compositions suitable for use as antireflective coating compositions (&ldquo;ARCs&rdquo;), particularly for deep UV applications. The antireflective compositions of the invention in general comprise a resin binder component that contains a high molecular weight polymer, e.g. a polymer having an M of at least about 40,000 daltons. ARCs of the invention exhibit exceptional conformality upon application to a substrate surface. For example, ARCs of the invention can coat substantial topography such as vertical and sloping steps with high conformality.

High conformality antireflective coating compositions

The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition (ARC), particularly suitable for short wavelength imaging applications such as 193 nm. The ARCs of the invention are preferably used with an overcoated resist layer (i.e. bottom layer ARCs) and in general comprise novel ARC resin binders that can effectively absorb reflected sub-200 nm exposure radiation.

Antireflective coating compositions and exposure methods under 200 nm

Methods utilizing antireflective coating compositions with exposure under 200 nm

The present invention provides new light absorbing compositions suitable for use as antireflective coating compositions (&ldquo;ARCs&rdquo;), including for deep UV applications. The antireflective compositions of the invention are particularly useful where a planarizing coating layer is required. ARCs of the invention contain a low molecular weight resin, a plasticizer compound and/or a low Tg resin. The invention also includes methods for applying forming planarizing ARC coating layers.

The present invention provides new light absorbing compositions suitable for use as antireflective coating compositions (&ldquo;ARCs&rdquo;), particularly for deep UV applications. The antireflective compositions of the invention in general comprise a resin binder component that contains a high molecular weight polymer, e.g. a polymer having an M,of at least about 40,000 daltons. ARCs of the invention exhibit exceptional conformality upon application to a substrate surface. For example, ARCs of the invention can coat substantial topography such as vertical and sloping steps with high conformality.

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Sudbury, MA, United States of America

Timothy G Adams