Lucent Technologies Inc.

Agere Systems Inc.

Agere Systems Guardian Corp.

Timothy Edward Doyle

Seungmoo Choi

Donald Thomas Cwynar

Scott Francis Shive

Felix Llevada

Alan Sangone Chen

Troy A Giniecki

A halo implant ( ) for an MOS transistor ( ) is formed in a semiconductor substrate ( ) at a shallow implant angle, relative to normal to the substrate surface ( ). A polysilicon gate structure ( ) is formed over a gate oxide ( ) and then a hard mask ( ), such as a TEOS-generated layer of silicon oxide, is deposited on an upper surface ( ) of the gate. The mask is etched with a blanket anisotropic etch to form a cap-shaped mask ( ). The shape of the cap causes the dopant for the halo implant to penetrate to a depth which follows the contour of the cap. Thus, halo implants may be formed which extend under the gate structure without the need for large angle implants and resultant shadowing problems caused by adjacent devices.

Method for fabricating MOS device with halo implanted region

A method of manufacturing a semiconductor device using shallow trench isolation is provided, wherein a plurality of protrusions are formed in the exposed surface of the mask layer overlying the active area of the device. The protrusions are preferably formed by forming a photo-resist layer on the surface of the mask layer and patterning the photo-resist layer such that the photo-resist layer defines a plurality of protrusion areas and a depression area within the defined active area. A portion of the mask layer is removed in the defined depression area to form a plurality of protrusions in the mask layer. Thereafter, a dielectric layer is deposited on the exposed surface of the mask layer and in the shallow trench and evenly planarized.

Shallow trench isolation method

Growing community of inventors

Orlando, FL, United States of America

Timothy Edward Doyle