University of California

Purdue Research Foundation

Bell Communications Research, Inc.

Timothy David Sands

Peidong Yang

Rong Fan

Richard E Russo

Ali Shakouri

Samuel S Mao

Arun Majumdar

Eicke R Weber

Hannes Kind

Haoquan Yan

Yiying Wu

Michael Huang

Henning Feick

Nathan W Cheung

William S Wong

Timothy Scott Fisher

Aaron Daniel Franklin

Matthew Ralph Maschmann

Ramamoorthy Ramesh

Vladimir M Shalaev

Rashid Bashir

Luke P Lee

Alexandra Boltasseva

Thirumalai Venky Venkatesan

Jeonggi Seo

Kolagani S Harshavardhan

David B Janes

James P Harbison

Silas J Allen, Jr

Gururaj Naik

Pankaj Jha

Silvanius S Lau

Long-Ching Wang

Mark L Leadbeater

Samuel M Sampere

Bivas Saha

Isaac Harshman Wildeson

Jeremy Leroy Schroeder

J Alex Chediak

Zhongsheng Luo

Lanthanum strontium manganate (LaSrMnO, i.e., LSMO)/lanthanum manganate (LaMnO, i.e., LMO) perovskite oxide metal/semiconductor superlattices were investigated for potential p-type thermoelectric applications. Growth optimizations were performed using pulsed laser deposition to achieve epitaxial superlattices of LSMO (metal)/LMO (p-type semiconductor) on strontium titanate (STO) substrates. The cross-plane Seebeck coefficient of the thermoelectric superlattice measured between the substrate and the capping layer has a value of at least 1600 &#x3bc;V/K measured at about 300K.

Giant cross-plane seebeck effect in oxide metal semiconductor superlattices for spin-magnetic thermoelectric devices

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as 'nanowires', include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

A titanium nitride-based metamaterial, and method for producing the same, is disclosed, consisting of ultrathin, smooth, and alternating layers of a plasmonic titanium nitride (TiN) material and a dielectric material, grown on a substrate to form a superlattice. The dielectric material is made of AScN, where 'x' ranges in value from 0.2 to 0.4. The layers of alternating material have sharp interfaces, and each layer can range from 1-20 nanometers in thickness. Metamaterials based on titanium TiN, a novel plasmonic building block, have many applications including, but not 'limited to emission enhancers, computer security, etc. The use of nitrogen vacancy centers in diamond, and light emitting diode (LED) efficiency enhancement is of particular interest.

Titanium nitride based metamaterial

In one embodiment, SWNTs are synthesized from an embedded catalyst in a modified porous anodic alumina (PAA) template. Pd is electrodeposited into the template to form nanowires that grow from an underlying conductive layer beneath the PAA and extend to the initiation sites of the SWNTs within each pore. Individual vertical channels of SWNTs are created, each with a vertical Pd nanowire back contact. Further Pd deposition results in annular Pd nanoparticles that form on portions of SWNTs extending onto the PAA surface. Two-terminal electrical characteristics produce linear I-V relationships, indicating ohmic contact in the devices.

Contact metallization of carbon nanotubes

A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiNon the GaN film, etching a growth opening through the SiNand into the GaN film, growing a GaN nanorod through the growth opening, the nanorod having a nanopore running substantially through its centerline. Focused ion beam etching can be used. The growing can be done using organometallic vapor phase epitaxy. The nanopore diameter can be controlled using the growth opening diameter or the growing step duration. The GaN nanorods can be removed from the substrate. The SiNlayer can be removed after the growing step. A SiOtemplate can be formed on the GaN film and the GaN can be grown to cover the SiOtemplate before depositing SiNon the GaN film. The SiOtemplate can be removed after growing the nanorods.

Growth process for gallium nitride porous nanorods

Methods and apparatus for an electronic device such as a field effect transistor. One embodiment includes fabrication of an FET utilizing single walled carbon nanotubes as the semiconducting material. In one embodiment, the FETs are vertical arrangements of SWCNTs, and in some embodiments prepared within porous anodic alumina (PAA). Various embodiments pertain to different methods for fabricating the drains, sources, and gates.

Field effect transistor fabrication from carbon nanotubes

A thermoelectric segment and a method for fabricating. The fabricating includes forming structures by depositing thin-film metal-semiconductor multilayers on substrates and depositing metal layers on the multilayers, joining metal bonding layers to form dual structures with combined bonding layers; and removing at least one of the substrates; and using the dual structure to form a thermoelectric segments. The method can include dicing the dual structures before or after removing the substrates. The method can include depositing additional bonding layers and joining dual structures to make thermoelectric segments of different thicknesses. Each multilayer can be about 5-10 &#x3bc;m thick. Each bonding layer can be about 1-2 &#x3bc;m thick. The bonding layers can be made of a material having high thermal and electrical conductivity. The multilayers can be (Hf,Zr,Ti,W)N/(Sc,Y,La,Ga,In,Al)N superlattice layers. Metal nitride layers can be deposited between each of the bonding layers and multilayers.

Laminated thin film metal-semiconductor multilayers for thermoelectrics

A modified porous anodic alumina template (PAA) containing a thin CNT catalyst layer directly embedded into the pore walls. CNT synthesis using the template selectively catalyzes SWNTs and DWNTs from the embedded catalyst layer to the top PAA surface, creating a vertical CNT channel within the pores. Subsequent processing allows for easy contact metallization and adaptable functionalization of the CNTs and template for a myriad of applications.

Vertical carbon nanotube device in nanoporous templates

The present invention relates to a functionally integrated microanalytical system for performing fluorescence spectroscopy. A source of fluorescence-exciting radiation, typically a LED, is integrated onto a substrate along with a photodetector and, in some embodiments, an optical filter. A pixel-to-point laser lift-off process is used to effect this component integration. For those cases in which a filter is required, a thin film bandgap filter is typically used, such as CdS or CdSSe(0&#x3c;x&#x3c;1). A disposable microchannel containing the sample and its fluorescent tag is mounted onto the integrated assembly of LED, photodetector and (optionally) filter. This configuration of components allows the microchannel and sample to be readily removed and replaced, facilitating rapid analysis of multiple samples. Multiple LEDS, detectors and filters (if present) can also be integrated onto the same substrate, permitting multiple wavelength analysis of the sample to be performed concurrently.

Integrated, fluorescence-detecting microanalytical system

Nanowires, nanostructures and devices fabricated therefrom

A method of separating a thin film of GaN epitaxially grown on a sapphire substrate. The thin film is bonded to an acceptor substrate, and the sapphire substrate is laser irradiated with a scanned beam at a wavelength at which sapphire is transparent but the GaN is strongly absorbing, e.g., 248 nm. After the laser irradiation, the sample is heated above the melting point of gallium, i.e., above 30&deg; C., and the acceptor substrate and attached GaN thin film are removed from the sapphire growth substrate. If the acceptor substrate is flexible, the GaN thin film can be scribed along cleavage planes of the GaN, and, when the flexible substrate is bent, the GaN film cleaves on those planes. Thereby, GaN lasers and other electronic and opto-electronic devices can be formed.

Separation of thin films from transparent substrates by selective optical processing

Growing community of inventors

West Lafayette, IN, United States of America

Timothy David Sands