Triquint Semiconductor Corporation

Agere Systems Inc.

Qorvo Us, Inc.

Timothy Daniel

Kurt George Steiner

Alan Sangone Chen

Taeho Kook

Robert Aigner

Marc Solal

Benjamin P Abbott

Shogo Inoue

Natalya F Naumenko

Charles E Carpenter

Joseph William Buckfeller

Maxwell Walthour Lippitt, Iii

Julien Gratier

Suzanne Combe

Stephen A Neston

Tom Moonlight

Craig G Clabough

A device including a piezoelectric substrate, an interdigital transducer (IDT), and an antireflective structure is disclosed herein. The piezoelectric substrate has a front-side surface and a smoothed back-side surface. The IDT is on the front-side surface of the piezoelectric substrate. The antireflective structure is over at least a portion of the smoothed back-side surface of the piezoelectric substrate. By having the antireflective structure on at least a portion of the smoothed back-side surface of the piezoelectric substrate, reflection of spurious bulk acoustic waves toward the front-side surface of the piezoelectric substrate can be reduced and/or eliminated to lessen interference with surface acoustic waves. The reduction and/or elimination of spurious bulk acoustic waves allows the device to forego conventional roughening of the back-side surface of the piezoelectric substrate, thereby reducing fractures at the back-side surface and allowing for singulation techniques capable of producing smaller die sizes.

Surface acoustic wave (SAW) device with antireflective structure

Disclosed embodiments include a surface acoustic wave device having electrode period, electrode width, and/or ratio of electrode width to electrode period varied in a prescribed manner.

High coupling, low loss saw filter and associated method

A SAW device having metal electrodes on a surface of the piezoelectric substrate includes a dielectric layer deposited on the surface. Depositing the layer results in seams extending upward from the electrodes extending above the surface of the substrate. An additional seam results from one seam extending from one electrode joining a second seam extending from an adjacent electrode within the dielectric layer and is generally formed above the height of the electrodes. The additional seam is removed through planarization or the like. The dielectric layer may be further planarized for providing a thickness of the dielectric layer above the electrodes as desired.

Temperature compensated surface acoustic wave device and method having buried interdigital transducers for providing an improved insertion loss and quality factor

A physical vapor deposition process for maintaining the wafer below a critical temperature. The rate at which material particles are sputtered from the target and thus deposited on the wafer is controllable in response to power supplied to the target. Maintaining a desired deposition rate maintains the wafer temperature below the critical temperature.

Temperature optimization of a physical vapor deposition process to prevent extrusion into openings

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Orlando, FL, United States of America

Timothy Daniel