Micron Technology Incorporated

Intel Corporation

Timothy C Langtry

Richard Keith Dodge

Hernan Adolfo Castro

Ilya V Karpov

Stephen H Tang

Derchang Kau

Jeremy Miles Hirst

In an example, an apparatus includes a memory array in a first region and decode circuitry in a second region separate from a semiconductor. The decode circuitry is coupled to an access line in the memory array.

Decode circuitry coupled to a memory array

Embodiments disclosed herein may relate to applying verify or read pulses for phase change memory and switch (PCMS) devices. The read pulses may be applied at a first voltage for a first period of time. A threshold event for the phase change memory cell may be detected during a sense window. The sense window may close after the expiration of the first period of time for which the read pulses are applied.

Verify or read pulse for phase change memory and switch

A phase change memory using an ovonic threshold switch selection device may be programmed from one state to another by first turning on the ovonic threshold switch. After the voltage across the cell has fallen, the cell may then be biased to program the cell to the desired state.

Programming phase change memories using ovonic threshold switches

Growing community of inventors

San Jose, CA, United States of America

Timothy C Langtry