Texas Instruments Corporation

Timothy A Taylor

Timothy J Hogan

A method for improving the edge-to-center photoresist ash rate uniformity in lower temperature (typically, but not limited to &#x3c;100&#xb0; C.) processing of integrated circuits and micro-electro-mechanical devices. A varying gap distancefrom the edge-to-center of the upper and lower grid plates,andof a plasma ashing machine is provided to allow additional flow of plasma gases into the normally semi-stagnated area near the center of the wafer being processed. This improvement overcomes the problem of slower photoresist removal in the center of the wafer. Three configurations of the invention is described, including both stepwise and continuous variation of the grid plate gap spacing and optionally, the variation of the size of grid plate holes in a parallel grid plate assembly.

Method for improving ash rate uniformity in photoresist ashing process equipment

A method for improving the edge-to-center photoresist ash rate uniformity in lower temperature (typically, but not limited to <100&deg; C.) processing of integrated circuits and micro-electro-mechanical devices. A varying gap distance from the edge-to-center of the upper and lower grid plates, and of a plasma ashing machine is provided to allow additional flow of plasma gases into the normally semi-stagnated area near the center of the wafer being processed. This improvement overcomes the problem of slower photoresist removal in the center of the wafer. Three configurations of the invention is described, including both stepwise and continuous variation of the grid plate gap spacing and optionally, the variation of the size of grid plate holes in a parallel grid plate assembly.

Growing community of inventors

Sachse, TX, United States of America

Timothy A Taylor