Advantech Global, Ltd

Timothy A Cowen

Thomas Peter Brody

Joseph A Marcanio

Jeffrey W Conrad

A method of forming a shadow mask vapor deposited transistor includes shadow mask vapor depositing a semiconductor segment. An electrically conductive drain contact is shadow mask vapor deposited on a first part of the semiconductor segment and a first insulator is shadow mask vapor deposited on the drain contact. An electrically conductive source contact is shadow mask vapor deposited on a second part of the semiconductor segment spaced from the drain contact and a second insulator is shadow mask vapor deposited on the source contact. A third insulator is shadow mask vapor deposited over at least part of each of the first and second insulators and the semiconductor segment between the drain contact and the source contact. An electrically conductive gate contact is shadow mask vapor deposited on the third insulator and in spaced relation to the semiconductor segment between the drain contact and the source contact.

Transistor structure for improved static control during formation of the transistor

A method of improved patterning of indium-tin oxide (ITO) for precision-cutting and aligning a liquid crystal display (LCD) panel includes depositing a transparent ITO layer upon a transparent substrate, depositing a non-transparent plating layer upon the transparent ITO layer and depositing a photoresist layer upon the non-transparent plating layer. The photoresist layer is patterned, exposed and developed to form a plurality of photoresist lines. The photoresist lines are exposed again in an active area only and the plating layer is etched to form a plurality of non-transparent plated lines. The ITO layer is then etched to form a plurality of ITO lines. The photoresist lines are then developed and the non-transparent plated lines are etched away in the active area only. The photoresist that is outside the active area is then removed.

Patterning of indium-tin oxide (ITO) for precision-cutting and aligning a liquid crystal display (LCD) panel

Via holes are formed in a continuous inline shadow mask production system by depositing a first conductor layer and subsequently depositing a first insulator layer over a portion of the first conductor layer. The first insulator layer is deposited in a manner to define at least one notch along its edge. The second insulator layer is then deposited on another portion of the first conductor layer in a manner whereupon the second insulator layer slightly overlaps each notch of the first insulator layer, thereby forming the one or more via holes. A conductive filler can optionally be deposited in each via hole. Lastly, a second conductive layer can be deposited over the first insulator layer, the second insulator layer and, if provided, the conductive filler.

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Lower Burrell, PA, United States of America

Timothy A Cowen