Asm IP Holding B.v.

Timothee Julien Vincent Blanquart

Atsuki Fukazawa

Yoshio Susa

Mitsuya Utsuno

Toshio Nakanishi

Suvi P Haukka

A Si-free C-containing film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or Nplasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition

A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or Nplasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

A film having filling capability of a patterned recess on a surface of a substrate is deposited by forming a viscous material in a gas phase by striking a plasma in a chamber filled with a volatile precursor that can be polymerized within certain parameter ranges which include a partial pressure of the precursor during a plasma strike and substrate temperature.

Method for depositing a gap-fill layer by plasma-assisted deposition

A method for reforming an amorphous carbon film as part of a deposition process thereof, includes process of: (i) depositing an amorphous carbon film on a substrate in a reaction space until a thickness of the amorphous carbon film reaches a predetermined thickness, and then stopping the deposition process; and (ii) exposing the amorphous carbon film to an Ar and/or He plasma in an atmosphere substantially devoid of hydrogen, oxygen, and nitrogen.

Method for reforming amorphous carbon polymer film

A method of forming a topology-controlled layer on a patterned recess of a substrate, includes: (i) depositing a Si-free C-containing film having filling capability on the patterned recess of the substrate by pulse plasma-assisted deposition to fill the recess in a bottom-up manner or bottomless manner; and (ii) subjecting the bottom-up or bottomless film filled in the recess to plasma aching to remove a top portion of the filled film in a manner leaving primarily or substantially only a bottom portion of the filled film or primarily or substantially only a sidewall portion of the filled film.

Method of forming topology-controlled amorphous carbon polymer film

The invention relates to depositing a layer on a substrate in a reactor, by:

Method of forming a structure on a substrate

A method of forming a thermally stable organosilicon polymer includes: (i) depositing an organosilicon polymer whose backbone is composed of silicon atoms on a substrate using a silicon-containing precursor in a reaction space; and (ii) exposing the organosilicon polymer deposited in step (i) to a hydrogen plasma in the absence of the precursor in the reaction space in a manner increasing Si&#x2014;H bonds and decreasing C&#x2014;H bonds in the organosilicon polymer without depositing an organosilicon polymer.

Method for forming thermally stable organosilicon polymer film

In an embodiment, a method for transferring a pattern constituted by vertical spacers arranged on a template with intervals to the template, includes depositing by plasma-enhanced cyclic deposition a layer as a spacer umbrella layer substantially only on a top surface of each vertical spacer made of silicon or metal oxide, wherein substantially no layer is deposited on sidewalls of the vertical spacers and on an exposed surface of the template, followed by transferring the pattern constituted by the vertical spacers to the template by anisotropic etching using the vertical spacers with the spacer umbrella layers.

Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride

A method is for forming a nitride or oxide film by plasma-assisted cyclic deposition, one cycle of which includes: feeding a first reactant, a second reactant, and a precursor to a reaction space where a substrate is placed, wherein the second reactant flows at a first flow ratio wherein a flow ratio is defined as a ratio of a flow rate of the second reactant to a total flow rate of gases flowing in the reaction space; and stopping feeding the precursor while continuously feeding the first and second reactants at a flow ratio which is gradually reduced from the first flow ratio to a second flow ratio while applying RF power to the reaction space to expose the substrate to a plasma. The second reactant is constituted by a hydrogen-containing compound or oxygen-containing compound.

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Tama, Japan

Timothee Julien Vincent Blanquart