Robert Boschgmbh

Robert Bosch Gmbh

Timo Schary

Frank Schatz

Daniel Monteiro Diniz Reis

Jochen Tomaschko

Mathias Mews

Jochen Reinmuth

Heribert Weber

Joerg Muchow

Helmut Grutzeck

Seow Yuen Yee

Vladimir Petkov

Kerrin Doessel

Daniel Pantel

Stefan Majoni

Matthias Boecker

Markus Kuhnke

Josip Mihaljevic

Jens Frey

Heiko Stahl

Julian Gonska

Thomas Mayer

Yvonne Bergmann

Reinhold Roedel

Janine Riedrich-Moeller

Ralf Boessendoerfer

Philip Kaupmann

Christoph Kaiser

Johannes Baader

Alexander Eberspaecher

A micromechanical oscillation system. The micromechanical oscillation system has a micromechanical oscillating body having at least one micromirror. In addition, the micromechanical oscillation system includes an electromagnetic drive unit which has a coil body and at least one magnet. The coil body essentially extends laterally to the micromirror. The at least one magnet extends underneath the coil body.

Micromechanical oscillation system

A micromechanical device, in particular a micromirror device. The device has at least one first micromechanical component and one second micromechanical component. The first component and the second component are directly or indirectly joined to one another. The first micromechanical component has a first sub-body and at least one second sub-body. The first sub-body extends in a first plane and the second sub-body in a second plane different from the first plane. The first plane and the second plane extend parallel to one another and the first plane extends above the second plane. The second sub-body is arranged in a transitional region to the second micromechanical component. A second extent of the second sub-body in the longitudinal direction is greater than a first extent of the first sub-body in the longitudinal direction.

Micromechanical device

An apparatus and a method for monitoring a semiconductor component are disclosed. A leakage current which flows through a first electrode and a second electrode of the semiconductor component is detected during operation of the semiconductor component. During a comparison, the leakage current is compared with a first limit value for the leakage current and an output is determined on the basis of a result of the comparison and/or a time is determined at which an extreme point, in particular a maximum, of the leakage current occurs and an output is determined on the basis of the time. The output comprises a state of the semiconductor component, and the output is output.

Apparatus and method for monitoring a semiconductor component

A semiconductor component that includes at least one dielectric layer and at least one first electrode and one second electrode. A first defect type and a second defect type, which is different from the first defect type, are also present in dielectric layer. The at least two different defect types accumulate at one of the two electrodes as a function of a main operating voltage applied between the first electrode and the second electrode, and of a main operating temperature that is present at characteristic times τand τ, and generate the maximum changes in barrier height δΦand δΦat the electrodes. τand δΦare associated with the first defect type, and τand δΦare associated with the second defect type. τ<τand δΦ<δΦapply.

Semiconductor component including a dielectric layer

A semiconductor component that includes at least one dielectric layer and at least one first electrode and one second electrode. In addition, at least two defect types different from one another are present in the dielectric layer. These at least two defect types different from one another move along localized defect states, each at an average effective distance, in the direction of one of the two electrodes as a function of an operating voltage that is applied between the first electrode and the second electrode, and an operating temperature that is present. The average effective distance is greater than 3.2 nm.

Device and method for using a semiconductor component in which a dielectric layer is situated between a first electrode and a second electrode of the semiconductor component, defects of a first defect type being present in the dielectric layer. The method includes: operating the semiconductor component using a first voltage having a first polarity between the first electrode and the second electrode, determining whether or not a condition is met for switching over from operating the semiconductor component using the first voltage to operating the semiconductor component using a second voltage, which has a second polarity opposite the first polarity, continuing the operation of the semiconductor component using the first voltage if the condition is not met, and otherwise ending the operation of the semiconductor component using the first voltage, and operating the semiconductor component using the second voltage between the first electrode and the second electrode.

Method and device for using a semiconductor component

An ultrasound transducer of a vehicle system includes a support member that attaches to and connects to the bottom portion of a membrane of the ultrasound transducer and supports the membrane, wherein the support member includes one or more cantilevers with a first end attaching to the membrane and a second end attaching to a support portion of the support member that attaches to the substrate, wherein the cantilever extends across and floats above the substrate, wherein the first end of the cantilever includes a stub extending away from a surface of the cantilever, wherein the stub extends away from the surface without contacting the substrate, wherein the one or more cantilevers includes one or more piezoelectric layers on the surface of the cantilever.

Ultrasound transducer with distributed cantilevers

An ultrasound transducer, wherein the ultrasound transducer includes a membrane including a top portion and a bottom portion, wherein the membrane is configured to vibrate and generate an ultrasound in response to voltage applied the transducer, wherein the membrane includes a perimeter including a plurality of sides and a top surface and a bottom surface with one or more feet extending away from the bottom surface; and a support member that attaches to and connects to the membrane and supports the membrane, wherein the support member includes one or more platforms extending to and attaching to the membrane and a substrate, wherein a first end of the platform connects to the membrane and includes a support portion, wherein the support portion away from the platform, wherein the platform includes the one or more piezoelectric layers, wherein the one or more platforms support and surround the membrane.

A micromechanical component. The micromechanical component includes: a mount; a displaceable part; and a first serpentine spring and a second serpentine spring which is embodied mirror-symmetrically with respect to the first serpentine spring in terms of a first plane of symmetry; a first actuator device and a second actuator device being embodied in such a way that by way of the first actuator device and the second actuator device, periodic deformations, mirror-symmetrical in terms of the first plane of symmetry, of the first serpentine spring and of the second serpentine spring are excitable; the micromechanical component also encompassing a first torsion spring and a second torsion spring that each extend along a rotation axis; and the displaceable part being displaceable, at least by way of the periodic and mirror-symmetrical deformations of the first serpentine spring and of the second serpentine spring, around the rotation axis with respect to the mount.

Micromechanical component and method for producing a micromechanical component

An electrical contacting between a surrounding wiring and a conductor region. The conductor region is situated in a conductor layer above an SOI wafer or SOI chip. A cover layer is situated above the conductor layer and below the surrounding wiring. The cover layer has a contacting region. The contacting region is insulated from the rest of the cover layer by a first configuration of recesses. An opening is formed at least in the contacting region. A metallic material is situated in the opening. The metallic material connects the surrounding wiring and the conductor region.

Electrical contacting and method for producing an electrical contacting

A microelectronics device, in particular a thin-film electronics device, having at least one bearer substrate and having at least one pyramidally layered, piezo stack situated on the bearer substrate, which stack has at least one piezo element and at least one electrode, in particular a floor electrode, and having at least one contact opening situated on the at least one electrode. The microelectronics device has a diffusion blocking element that is situated on the at least one electrode at least partly at a distance from the piezo element, and/or the contact opening forms a contact surface that is at most as large as one one-thousandth of a surface of the at least one piezo element, and/or a length of an electrical path from the at least one contact opening to the at least one piezo element corresponds to at least twice the circumference of the at least one contact opening.

Microelectronics device and method for producing a microelectronics device

A micromechanical micromirror array including a frame including a cutout, a micromirror device suspended on the frame in the area of the cutout in a first plane, a first pivoting vane device suspended on the frame protruding into the area of the cutout, coupled to the micromirror device via a first spring device, a second pivoting vane device suspended on the frame protruding into the area of the cutout, coupled to the micromirror device via a second spring device, a first drive device for deflecting the first pivoting vane device along a first axis, perpendicular to the first plane, and a second drive device for the antiphase deflection of the second pivoting vane device along the first axis.

Micromechanical micromirror array and corresponding operating method

A method for producing a via in a wafer includes providing a wafer, comprising silicon. The method includes producing a conductive region, in the form of a conductor track, preferably composed of polycrystalline silicon, in the wafer. The method includes producing a hole in the wafer such that the hole is fluidically connected to the conductive region and the sidewalls of the hole comprise silicon. The method includes applying a tungsten hexafluoride-resistant protective layer, produced from silicon oxide, in the region of the surface of the hole that is to be produced or has been produced, such that an opening of the hole is free of a protective layer. The method includes applying tungsten hexafluoride to the hole and the region of the opening of the hole by a reducing-agent-free vapor phase deposition process, preferably in the form of a CVD process, for producing the via.

Method for producing at least one via in a wafer

A method for bonding two silicon substrates and a corresponding system of two silicon substrates. The method includes: providing first and second silicon substrates; depositing a first bonding layer of pure aluminum or of aluminum-copper having a copper component between 0.1 and 5% on a first bonding surface of the first silicon substrate; depositing a second bonding layer of germanium above the first bonding surface or above a second bonding surface of the second silicon substrate; subsequently joining the first and second silicon substrates, so that the first and the second bonding surfaces lie opposite each other; and implementing a thermal treatment step to form an eutectic bonding layer of aluminum-germanium or containing aluminum-germanium as the main component, between the first silicon substrate and the second silicon substrate, spikes which contain aluminum as a minimum and extend into the first silicon substrate, forming at least on the first bonding surface.

Method for bonding two silicon substrates, and a correspondeing system of two silicon substrates

A method for producing a component having a semiconductor substrate with through-hole plating is provided, the through-plating being surrounded by a recess, and the semiconductor substrate having a first layer on one side, which covers the recess on the first side. The semiconductor substrate has a second layer on a second side, which covers the recess on the second side, and the through-hole plating is surrounded by a ring structure which is produced from the semiconductor substrate. The recess surrounding the ring structure is produced in the same process step or at the same time as the recess for the through-hole plating.

Growing community of inventors

Aichtal-Neuenhaus, Germany

Timo Schary