Siltronic Ag

Timo Mueller

Gudrun Kissinger

Michael Gehmlich

Andreas Sattler

Wilfried Von Ammon

Martin Weber

Walter Heuwieser

Michael Skrobanek

Dawid Kot

Frank Faller

Reinhold Wahlich

Katsuhiko Nakai

Karl Mangelberger

Atsushi Ikari

Friedrich Passek

Peter Krottenthaler

Erich Daub

Arnold Kuehhorn

Klaus Messmann

Michael Boy

Johannes Studener

Robert Kretschmer

Dirk Waehlisch

A semiconductor single-crystal silicon, is produced from a silicon substrate wafer containing interstitial oxygen in a concentration of more than 5×10AT/cm(new ASTM) by an RTA treatment of the wafer in a first heat treatment at a first temperature in a temperature range of not less than 1200° C. and not more than 1260° C. for a period of not less than 5 s and not more than 30 s, where the front side of the substrate wafer is exposed to an atmosphere containing argon;

Method for producing semiconductor wafers

A method produces a single-crystal silicon semiconductor wafer. A single-crystal silicon substrate wafer is double side polished. A front side of the substrate wafer is chemical mechanical polished (CMP). An epitaxial layer of single-crystal silicon is deposited on the front side of the substrate wafer. A first rapid thermal anneal (RTA) treatment is performed on the coated substrate wafer at 1275-1295&#xb0; C. for 15-30 seconds in argon and oxygen, having oxygen of 0.5-2.0 vol %. The coated substrate wafer is then cooled at or below 800&#xb0; C., with 100 vol % argon. A second RTA treatment is performed on the coated substrate wafer at a 1280-1300&#xb0; C. for 20-35 seconds in argon. An oxide layer is removed from a front side of the coated substrate wafer. The front side of the coated substrate wafer is polished by CMP.

Method for producing a semiconductor wafer composed of monocrystalline silicon

A semiconductor wafer made of single-crystal silicon has an oxygen concentration (new ASTM) of not less than 4.9&#xd7;10atoms/cmand not more than 6.5&#xd7;10atoms/cmand a nitrogen concentration (new ASTM) of not less than 8&#xd7;10atoms/cmand not more than 5&#xd7;10atoms/cm, wherein a frontside of the semiconductor wafer is covered with an epitaxial layer made of silicon, wherein the semiconductor wafer comprises BMDs of octahedral shape whose mean size is 13 to 35 nm, and whose mean density is not less than 3&#xd7;10cmand not more than 4&#xd7;10cm, as determined by IR tomography.

Semiconductor wafer made of single-crystal silicon and process for the production thereof

Semiconductor wafers useful for NAND circuitry and having a front side, a rear side, a middle and a periphery, have an Nv region which extends from the middle to the periphery;

Semiconductor wafer composed of single-crystal silicon with high gate oxide breakdown, and a process for the manufacture thereof

A semiconductor wafer comprising single-crystal silicon has defined concentrations of oxygen, nitrogen and hydrogen; the semiconductor wafer further contains BMD seeds having a density averaged over the radius of not less than 1&#xd7;10cmand not more than 1&#xd7;10cm; surface defects having a density averaged over the radius of not less than 1100 cm; and BMDs, whose density is not lower than a lower limit of 5&#xd7;10/cm. The semiconductor wafers are produced by a process which enables obtention of the required ranges of concentrations of oxygen, nitrogen, hydrogen, BMD seeds, and BMD's.

Semiconductor wafer made of monocrystalline silicon, and method for producing same

Epitaxial wafers with a high concentration of BMD nuclei or developed BMDs just below a denuded zone, and having low surface roughness, are produced by forming an oxynitride layer on a purposefully oxidized epitaxial layer by a short RTA treatment in a nitriding atmosphere, removing the oxynitride layer, and then polishing the epitaxial surface.

Epitaxially coated semiconductor wafer, and method for producing an epitaxially coated semiconductor wafer

The invention relates to a semiconductor wafer of monocrystalline silicon, and to a method for producing it. The semiconductor wafer has a zone, DZ, which is free of BMD defects and extends from a front side of the semiconductor wafer into the bulk of the semiconductor wafer, and a region having BMD defects which extends from the DZ further into the bulk of the semiconductor wafer. A silicon single crystal is pulled by the Czochralski method and processed to form a polished monocrystalline silicon substrate wafer. The substrate wafer is treated by rapidly heating and cooling the substrate wafer, slowly heating the rapidly heated and cooled substrate wafer, and keeping the substrate wafer at a specific temperature and over a specific period.

Semiconductor wafer composed of monocrystalline silicon and method for producing it

Monocrystalline silicon semiconductor wafers have a front side and a rear side, and a denuded zone which extends from the front side to the rear side as far as a depth which between a center and an edge of the semiconductor wafer on average is not less than 8 &#x3bc;m and not more than 18 &#x3bc;m, and having a region adjoining the denuded zone having BMDs whose density at a distance of 30 &#x3bc;m from the front side is not less than 2&#xd7;10cm. The semiconductor wafers are produced by a method comprising providing a substrate wafer of monocrystalline silicon and an RTA treating the substrate wafer, the treatment subdivided into a first thermal treatment of the substrate wafer in an atmosphere consisting of argon and into a second thermal treatment of the substrate wafer in an atmosphere consisting of argon and ammonia.

Semiconductor wafer composed of silicon and method for producing same

Semiconductor wafers composed of monocrystalline silicon and doped with nitrogen contain an OSF region and a Pregion, wherein the OSF region extends from the center radially toward the edge of the wafer as far as the Pregion; the wafer has an OSF density of less than 10 cm, a BMD density in the bulk of at least 3.5&#xd7;10cm, and a radial distribution of the BMD density with a fluctuation range BMD/BMDof not more than 3. The wafers are produced by controlling initial nitrogen content and maintaining oxygen within a narrow window, followed by a heat treatment.

The epitaxial layer defects generated from voids of a silicon substrate wafer containing added hydrogen are suppressed by a method for producing an epitaxial wafer by:

Epitaxial wafer and production method thereof

A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1&#xb7;10-8&#xb7;10atoms/cm, an oxygen concentration of 5.2&#xb7;10-7.5&#xb7;10atoms/cm, a central thickness BMD density of 3&#xb7;10-2&#xb7;10cm, a cumulative length of linear slippages &#x2266;3 cm and a cumulative area of areal slippage regions &#x2266;7 cm, the front surface having &#x3c;45 nitrogen-induced defects of &#x3e;0.13 &#x3bc;m LSE in the DNN channel, a layer at least 5 &#x3bc;m thick, in which &#x2266;1&#xb7;10COPs/cmwith a size of &#x2267;0.09 &#x3bc;m occur, and a BMD-free layer &#x2267;5 &#x3bc;m thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages.

Growing community of inventors

Burghausen, Germany

Timo Mueller