Asm International N.v.

Timo Hänninen

Mikko Ritala

Markku Leskelä

Timo Hatanpää

Raija H Matero

Antti H Rahtu

Marko Vehkamaki

Marko Vehkamäki

Atomic layer deposition (ALD) type processes for producing titanium containing oxide thin films comprise feeding into a reaction space vapor phase pulses of titanium alkoxide as a titanium source material and at least one oxygen source material, such as ozone, capable of forming an oxide with the titanium source material. In preferred embodiments the titanium alkoxide is titanium methoxide.

Metal oxide films

The present invention relates to a method for growing oxide thin films which contain barium and/or strontium. According to the method, such thin films are made by the ALE technique by using as precursors for barium and strontium their cyclopentadienyl compounds. A thin film made by means of the invention has a high permittivity and excellent conformality.

Method for growing oxide thin films containing barium and strontium

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Helsinki, Finland

Timo Hänninen